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KSA910 PNP EPITAXIAL SILICON TRANSISTOR
DRIVER STAGE OF AUDIO AMPLIFIER
HIGH VOLTAGE SWITCHING APPLICATIONS
• Complement to KSC2310
• Collector-Emitter Voltage V
CEO
= -150V
• Output Capacitance: COB=5pF (MAX)
ABSOLUTE MAXIMUM RATINGS (TA=25¡É)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
-150
-150
-5
-50
800
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (TA=25¡É)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance
BV
BV
BV
I
h
V
f
C
CBO
T
CBO
CEO
EBO
FE
(sat)
CE
OB
V
V
V
mA
mW
¡É
¡É
IC= -100§Ë, IE=0
IC= -5mA, IB=0
IE= -10§Ë, IE=0
VCB= -150V, IE=0
VCE= -5V, IC= -10mA
IC= -10mA, IB= -1mA
VCE= -30V, IC= -10mA
VCB= -10V, IE=0,
f=1MHz
TO-92L
1. Emitter 2. Collector 3. Base
-150
-150
-5
40
100
-100
240
-0.8
V
V
V
nA
V
MHz
5
pF
hFE CLASSIFICATION
Classification R O Y
h
FE
40-80 70-140 120-240
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KSA910 PNP EPITAXIAL SILICON TRANSISTOR
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