SAMSUNG KM6164000B Technical data
查询KM6164000BL-L供应商
KM6164000B Family
Document Title
256Kx16 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
2.0
3.0
4.0
4.01
History
Initial draft
Revise
- Die name change ; A to B
Finalize
Revise
- Operating current update and release.
ICC(Read/Write) = 30/60 → 15/75mA
ICC1(Read/Write) = 30/60 → 15/75mA
ICC2 = 160 → 130mA
Revise
- Change datasheet format
- Remove ICC write value from table.
Revise
- Change test load at 55ns: 100pF → 50pF
Errarta correction
CMOS SRAM
Draft Data
June 28, 1996
September 19, 1996
December 17, 1996
February 17, 1997
February 17, 1998
June 22, 1998
August 8, 1998
Remark
Advance
Preliminary
Final
Final
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 4.01
June 1998
KM6164000B Family
256Kx16 bit Low Power CMOS Static RAM
CMOS SRAM
FEATURES
• Process Technology : TFT
• Organization : 256Kx16
• Power Supply Voltage : 4.5~5.5V
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 44-TSOP2-400F/R
GENERAL DESCRIPTION
The KM616V4000B families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and small package
types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed(ns)
(ISB1, Max)
KM6164000BL-L Commercial(0~70°C) 4.5~5.5V
KM6164000BLI-L Industrial(-40~85°C) 4.5~5.5V 70/100 50µA
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
A4
1
A3
2
A2
3
A1
4
A0
5
CS
6
I/OI
7
I/O2
8
I/O3
9
I/O4
10
11
Vcc
44-TSOP2
12
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
13
14
15
16
17
18
19
20
21
22
Forward
Name Function Name Function
CS Chip Select Input Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input UB Upper Byte(I/O9~16)
A0~A17 Address Inputs LB Lower Byte (I/O1~8)
I/O1~I/O16 Data Inputs/Outputs N.C No Connection
44
A5
43
A6
42
A7
41
OE
40
UB
39
LB
38
I/O16
37
I/O15
36
I/O14
35
I/O13
Vss
34
Vcc
33
I/O12
32
I/O11
31
I/O10
30
I/O9
29
N.C
28
A8
27
A9
26
A10
25
A11
24
A12
23
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A10
A11
44
A5
43
A6
42
A7
41
OE
40
UB
39
LB
38
37
36
35
34
44-TSOP2
33
Reverse
32
31
30
29
28
A8
27
A9
26
25
24
A12
23
1
A4
2
A3
3
A2
4
A1
5
A0
6
CS
7
I/OI
8
I/O2
9
I/O3
10
I/O4
11
Vcc
12
Vss
13
I/O5
14
I/O6
15
I/O7
16
I/O8
17
WE
18
A17
19
A16
20
A15
21
A14
22
A13
551)/70
FUNCTIONAL BLOCK DIAGRAM
A13
A14
A0
A1
A15
A16
A17
A2
A3
A4
I/O1~I/O8
I/O9~I/O16
WE
OE
Control
logic
UB
LB
CS
Power Dissipation
Standby
Operating
(ICC2, Max)
20µA
Clk gen.
Row
select
Data
cont
Data
cont
Data
cont
PKG Type
130mA 44-TSOP2-F/R
Precharge circuit.
Vcc
Vss
Memory array
1024 rows
256×16 columns
I/O Circuit
Column select
A8 A9 A10 A5 A6 A4A7
A12
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 4.01
June 1998
KM6164000B Family
CMOS SRAM
PRODUCT LIST
Commercial Temperature Product(0~70°C) Industrial Temperature Products(-40~85°C)
Part Name Function Part Name Function
KM6164000BLT-5L
KM6164000BLT-7L
KM6164000BLR-5L
KM6164000BLR-7L
44-TSOP2-F, 55ns, LL-pwr
44-TSOP2-F, 70ns, LL-pwr
44-TSOP2-R, 55ns, LL-pwr
44-TSOP2-R, 70ns, LL-pwr
KM6164000BLTI-7L
KM6164000BLTI-10L
KM6164000BLRI-7L
KM6164000BLRI-10L
44-TSOP2-F, 70ns, LL-pwr
44-TSOP2-F, 100ns, LL-pwr
44-TSOP2-R, 70ns, .LL-pwr
44-TSOP2-R, 100ns, LL-pwr
FUNCTIONAL DESCRIPTION
CS OE WE LB UB I/O1~8 I/O9~16 Mode Power
H
1)
X
L H H
L
1)
X
L L H L H Dout High-Z Lower Byte Read Active
L L H H L High-Z Dout Upper Byte Read Active
L L H L L Dout Dout Word Read Active
L
L
L
1. X means don′t care. (Must be in low or high state)
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
High-Z High-Z Deselected Standby
High-Z High-Z Output Disabled Active
H H High-Z High-Z Output Disabled Active
L L H Din High-Z Lower Byte Write Active
L H L High-Z Din Upper Byte Write Active
L L L Din Din Word Write Active
ABSOLUTE MAXIMUM RATINGS
1)
Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V Voltage on Vcc supply relative to Vss VCC -0.5 to7.0 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA
0 to 70 °C KM6164000BL-L
-40 to 85 °C KM6164000BLI-L
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 4.01
June 1998
Loading...