The KB8821/22/23 are high performance dual frequency synthesizers with integrated prescalers designed for RF operation
up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz.
The KB8821/22/23 contain dual-modulus prescalers. The RF
synthesizer adopts a 64/65 or an 128/129 prescaler(32/33 or
64/65 for the KB8823) and the IF synthesizer adopts an 8/9 or
a 16/17 prescaler.
Using a proprietary digital phase-locked-loop technique, the
KB8821/22/23 have linear phase detector characteristic and
can be used for very stable, low noise local oscillator signal.
Supply voltage can range from 2.7V to 4.0V. The KB8821/22/
23 are now availablein a20-TSSOP/24-QFN package.
FEATURES
• Very low current consumption(8821:3.5mA, 22:4.5mA, 23:5.5mA)
• Operating voltage range : 2.7 ~ 4.0V
• Selectable power saving mode(Icc=1uA typical @3V)
• Dual modulus prescaler :
KB8821/22 (RF) 64/65 or 128/129
KB8823 (RF) 32/33 or 64/65
KB8821/22/23 (IF) 8/9 or 16/17
20-Lead(0.173 Wide) Thin Shrink Small
Outline Package(20-TSSOP)
14
(Analog)
13
12
11
CPoIF
GND
finIF
finIF
GND
LE
DATA
CLOCK
1. pin #9 = pin #17(internally connected).
2. Do not tie up Vp and VDD
: Vp is the source of digital noises. The power
for analog part is supplied by VDD. If Vp and
VDD are tied together, noisy Vp corrupts the
power source for the analog part.
399-06-15
PRELIMINARY SPECIFICATION (V1.5)
FREQUENCY SYNTHESIZER
KB8821/22/23
PIN DESCRIPTION
Pin NoSymbolI / ODescription
1VDD1-Power supply voltage input for the RF PLL part. VDD1 must equal VDD2. In
order to reject supply noise, bypass capacitors must be placed as close as
possible to this pin and be connected directly to the ground plane.
2Vp1-Power supply voltage input for RF charge pump( ≥ VDD1).
3CPoRFOInternal RF charge pump output for connection to an external loop filter whose
filtered output drives an external VCO.
4GND-Ground for RF digital blocks.
5finRFIRF prescaler input. The signal comes from the external VCO.
6finRFIThe complementary input of the RF prescaler. A bypass capacitor must be
placed as close as possible to this pin and be connected directly to the ground
plane. The bypass capacitor is optional with some loss of sensitivity.
7GND-Ground for RF analog blocks.
8OSCinIReference counter input. TCXO is connected via a coupling capacitor.
9GND-Ground for IF digital blocks.
10
11CLOCKICMOS clock input. Serial data for the various counters is transfered into the
12DATAIBinary serial data input. The MSB of CMOS input data is entered first. The
13LEILoad enable CMOS input. When LE becomes high, the data in the shift
14GND-Ground for IF analog blocks.
15finIFIThe complementary input of the IF prescaler. A bypass capacitor must be
16finIFIIF prescaler input. The signal comes from the external VCO.
17GND-Ground for IF digital blocks.
18CPoIFOInternal IF charge pump output for connection to an external loop filter whose
foLD
OMultiplexed output of the RF/IF programmable counters, the reference
counters, the lock detect signals and the shift registers. The output level is
CMOS level. (see fout Programmable Truth Table)
22-bit shift register on the rising edge of the clock signal.
control bits are on the last two bits. CMOS input.
register is loaded into one of the four latches(by the control bits).
placed as close as possible to this pin and be connected directly to the ground
plane. The bypass capacitor is optional with some loss of sensitivity.
filtered output drives an external VCO.
19Vp2-Power supply voltage input for IF charge pump( ≥ VDD2)
20VDD2-Power supply voltage input for the IF PLL part. VDD1 must equal VDD2. In
order to reject supply noise, bypass capacitors must be placed as close as
possible to this pin and be connected directly to the ground plane.
499-06-15
PRELIMINARY SPECIFICATION (V1.5)
FREQUENCY SYNTHESIZER
EQUIVALENT CIRCUIT DIAGRAM
♦ CLOCK, DATA, LE♦ foLD
♦ OSCin♦ CPoRF, CPoIF
KB8821/22/23
♦ finRF, finRF, finIF, finIF
finRF,
finIF
finRF,
finIF
Vbias
599-06-15
PRELIMINARY SPECIFICATION (V1.5)
FREQUENCY SYNTHESIZER
ABSOLUTE MAXIMUM RATINGS
CharacteristicSymbolValueUnit
KB8821/22/23
Power Supply VoltageV
Power DissipationP
Operating TemperatureT
Storage TemperatureT
DD
D
a
STG
5.5V
600mW
-40°C ~ +85oC
-65°C ~ +150oC
°C
°C
ELECTROSTATIC CHARACTERISTICS
CharacteristicPin No.ESD levelUnit
Human Body ModelAll< ±2000V
Machine ModelAll< ±300V
Charged Device ModelAll< ±800V
** These devices are ESD sensitive. These devices must be handled in the ESD protected environment.