Samsung K4S281632M-TL1L, K4S281632M-TL1H, K4S281632M-TL10, K4S281632M-TC1H, K4S281632M-TC10 Datasheet

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K4S281632M CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Aug. 1999
Rev. 0.0 Aug. 1999
K4S281632M CMOS SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM
GENERAL DESCRIPTIONFEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
FUNCTIONAL BLOCK DIAGRAM
The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programma­ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor­mance memory system applications.
ORDERING INFORMATION
Part No. Max Freq. Inter- Package
K4S281632M-TC/L80 125MHz(CL=3) K4S281632M-TC/L1H 100MHz(CL=2) K4S281632M-TC/L1L 100MHz(CL=3) K4S281632M-TC/L10 66MHz(CL=2 &3)
LVTTL
54pin
TSOP(II)
CLK
ADD
Data Input Register
Bank Select
Refresh Counter
Row Buffer
Address Register
LRAS
LCBR
LCKE
LRAS LCBR LWE LDQM
CLK CKE CS RAS CAS WE LDQM
Row Decoder Col. Buffer
Latency & Burst Length
Programming Register
LCAS LWCBR
Timing Register
2M x 16 2M x 16 2M x 16 2M x 16
Column Decoder
UDQM
LWE
LDQM
Sense AMP
Output BufferI/O Control
DQi
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S281632M CMOS SDRAM
PIN CONFIGURATION (Top view)
VDD
DQ0
VDDQ
DQ1 DQ2
VSSQ
DQ3 DQ4
VDDQ
DQ5 DQ6
VSSQ
DQ7
VDD
LDQM
WE CAS RAS
CS BA0 BA1
A10/AP
A0 A1 A2 A3
VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS N.C/RFU UDQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin Name Input Function
CLK System clock Active on the positive going edge to sample all inputs. CS Chip select
CKE Clock enable
A0 ~ A11 Address
BA0 ~ BA1 Bank select address
RAS Row address strobe
CAS Column address strobe
WE Write enable
L(U)DQM Data input/output mask
DQ0 ~ 15 Data input/output Data inputs/outputs are multiplexed on the same pins. VDD/VSS Power supply/ground Power and ground for the input buffers and the core logic.
VDDQ/VSSQ Data output power/ground
N.C/RFU
No connection /reserved for future use
Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access.
Enables write operation and row precharge. Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active.
Isolated power supply and ground for the output buffers to provide improved noise immunity.
This pin is recommended to be left No Connection on the device.
Rev. 0.0 Aug. 1999
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