Samsung irlr014a Datasheet

Advanced Power MOSFET

IRLR/U014A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower R

: 0.122 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC)

*

Total Power Dissipation (TC=25oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O O

O O O

BV R

DSS

DS(on)

= 60 V

= 0.155Ω

ID = 8.2 A

D-PAK

1

3

1. Gate 2. Drain 3. Source

60

8.2

5.2

1

2

1 1

3

30

+

_

20

58

8.2

1.8

5.5

2.5 18

0.14

- 55 to +150

300

I-PAK

2

1

2

3

V A A

V

mJ

A

mJ

V/ns

W W

W/oC

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount).

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

6.81 50

110

o

C/W

IRLR/U014A

N-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

BV BV/ TJ

∆ ∆

V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge

g

Gate-Source Charge Gate-Drain(“Miller”) Charge

o

=25 unless otherwise specified)

C

VGS=0V,ID=250 A

60

--

1.0

--

0.045

--

4.9 265 100

37 10 16 21 15

7.2

2.6

3.2

-100

0.155

--

2.0

100

10

100

-345 115

45 30 45 55 40 10

--

V

ID=250 A See Fig 7

V/oC

VDS=5V,ID=250 A

V

VGS=20V

nA

VGS=-20V VDS=60V

A

µ

VDS=48V,TC=125

VGS=5V,ID=4.1A

Ω

VDS=30V,ID=4.1A VGS=0V,VDS=25V,f =1MHz

pF

See Fig 5

VDD=30V,ID=10A, RG=12

ns

See Fig 13

VDS=48V,VGS=5V,

nC

ID=10A

See Fig 6 & Fig 12

µ

o

C

4

O

4

O

Ω

5

O4O

5

O4O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=1mH, IAS=8.2A, VDD=25V, RG=27 , Starting TJ =25

O

3

ISD 10A, di/dt 200A/ s, VDD BV

O

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

_

µ

_

<

Ω

_

<

DSS

µ

1

O

4

O

, Starting TJ =25

_

<

--

8.2

--

30

--

1.5

--

50

--

0.075

o

C

o

C

--

Integral reverse pn-diode

A

in the MOSFET

o

TJ=25 ,IS=8.2A,VGS=0V

C

o

TJ=25 ,IF=10A

C

diF/dt=100A/ s

ns

µ

C

V

µ

O

4

N-CHANNEL

Ω

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

1

10

4.0 V

3.5 V Bottom : 3.0 V

, Drain Current [A]

D

I

0

10

-1

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRLR/U014A

1

10

150 oC

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

0 2 4 6 8 10

- 55 oC

VGS , Gate-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. VDS = 30 V

3. 250 µs Pulse Test

0.25

0.20

VGS = 5 V

]

0.15

, [

DS(on)

0.10

R

0.05

Drain-Source On-Resistance

0.00 0 10 20 30 40

VGS = 10 V

ID , Drain Current [A]

500

C

400

iss

C

oss

300

200

C

Capacitance [pF]

rss

100

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

VDS , Drain-Source Voltage [V]

@ Note : TJ = 25 oC

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

150 oC

DR

I

25 oC

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

@ Notes :

1. VGS = 0 V

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 2 4 6 8

VDS = 12 V

VDS = 30 V

VDS = 48 V

@ Notes : ID =10 A

QG , Total Gate Charge [nC]

IRLR/U014A

θ

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Junction Temperature [oC]

2

10

Operation in This Area is Limited by R

DS(on)

@ Notes :

1. VGS = 0 V

2. ID = 250 µA

N-CHANNEL

POWER MOSFET

2.0

1.5

, (Normalized)

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

10

8

@ Notes :

1. VGS = 5 V

2. ID = 5 A

1

10

@ Notes :

0

, Drain Current [A]

10

D

-1

10

0

10

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

I

VDS , Drain-Source Voltage [V]

1

10

0

10

(t) , Thermal Response

-1

JC

10

Z

10

D=0.5

0.2

0.1

0.05

0.02

0.01

-5

0.1 ms

1 ms

10 ms

DC

1

10

2

10

6

4

, Drain Current [A]

D

I

2

0

25 50 75 100 125 150

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

single pulse

-4

10

-3

10

-2

10

t1 , Square Wave Pulse Duration [sec]

Tc , Case Temperature [oC]

(t)=6.81 oC/W Max.

θJC

P

DM

t

-1

10

2

(t)

θJC

1

t

2

0

10

1

10

N-CHANNEL

POWER MOSFET

IRLR/U014A

Fig 12. Gate Charge Test Circuit & Waveform

5V

“ Current Regulator ”

200nF12V

3mA

Current Sampling (IG)

V

in

R

G

50KΩ

V

out

V

Same Type

GS

as DUT

300nF

V

GS

5V

DS

Q

DUT

R

1

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

out

90%

)

DS

10%

V

in

gs

t

d(on)tr

Q

g

Q

gd

Charge

t

d(off)

t

on

f

t

off

Vary tp to obtain required peak I

5V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

= LL I

AS

----

1 2

AS

ID (t)

t

2

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

IRLR/U014A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

N-CHANNEL

POWER MOSFET

V

GS

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

Driver

R

G

D =

Same Type

as DUT

• dv/dt controlled by “RG”

• IS controlled by Duty Factor “D”

Gate Pulse Width

-------------------------Gate Pulse Period

L

V

DD

5V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD