Samsung irlm120a Datasheet

Advanced Power MOSFET

IRLM120A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower R

: 0.176 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (TA=25oC) Continuous Drain Current (TA=70oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) Linear Derating Factor

*

Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

I V E

I E

dv/dt

P

, T

J

T

DSS

I

D

DM

GS

AS

AR

D

STG

L

¨ç

¨è ¨ç ¨ç ¨é

BV

DSS

R

DS(on)

ID = 2.3 A

SOT-223

1

1. Gate 2. Drain 3. Source

100

2.3

1.85 18

¡¾20

105

2.3

0.27

6.5

2.7

0.022

- 55 to +150

300

= 100 V

= 0.22 Ω

2

3

V/ns

W/oC

V A A

V

mJ

A

mJ

W

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJA

Junction-to-Ambient

* When mounted on the minimum pad size recommended (PCB Mount).

*

46.3--

o

C/W

IRLM120A

N-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

BV ∆BV/∆TJ V

R

t

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge

=25oC unless otherwise specified)

C

VGS=0V,ID=250µA

100

--

1.0

--

0.09

--

4.6

340

90 39

5 10 19

9

10.2

1.7

6.0

-100

--

2.0

100

10

100

0.22

-440 115

50 20 30 50 30 15

--

V

ID=250µA See Fig 7

V/oC

VDS=5V,ID=250µA

V

VGS=20V

nA

VGS=--20V VDS=100V

µA

VDS=80V,TC=125oC

VGS=5V,ID=1.15A

Ω

VDS=40V,ID=1.15A VGS=0V,VDS=25V,f =1MHz

pF

See Fig 5

VDD=50V,ID=9.2A, RG=9

ns

See Fig 13

VDS=80V,VGS=5V,

nC

ID=9.2A

See Fig 6 & Fig 12

4

O

4

O

Ω

5

O4O

5

O4O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=30mH, IAS=2.3A, VDD=25V, RG=27 , Starting TJ =25

O

3

ISD 9.2A, di/dt 300A/ s, VDD BV

O

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

_

<

--

2.3

1

--

98

0.34

18

1.5

--

O

4

--

O

--

Ω

µ

_

<

DSS

µ

, Starting TJ =25

o

C

o

_

<

C

Integral reverse pn-diode

A

in the MOSFET

V

TJ=25oC,IS=2.3A,VGS=0V

ns

TJ=25oC,IF=9.2A

µC

diF/dt=100A/µs

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 7.0 V

6.0 V

1

5.5 V

10

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3.0 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRLM120A

1

10

150 oC

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

0 2 4 6 8 10

- 55 oC

VGS , Gate-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. VDS = 40 V

3. 250 µs Pulse Test

0.4

VGS = 5 V

VGS = 10 V

]

Ω

, [

DS(on)

R

0.3

0.2

0.1

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0.0 0 10 20 30 40

600

C

480

360

C

240

Capacitance [pF]

C

120

0

10

ID , Drain Current [A]

iss

oss

rss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

150 oC

DR

I

10

25 oC

-1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

@ Notes :

1. VGS = 0 V

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 2 4 6 8 10 12

VDS = 20 V

VDS = 50 V

VDS = 80 V

@ Notes : ID = 9.2 A

QG , Total Gate Charge [nC]

IRLM120A

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

2.5

POWER MOSFET

N-CHANNEL

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Junction Temperature [oC]

2

10

1

10

0

10

@ Notes :

, Drain Current [A]

D

-1

I

10

-2

10

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-1

Operation in This Area is Limited by R

0

10

DS(on)

DC

10

10 ms

1

VDS , Drain-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. ID = 250 µA

100 µs

1 ms

10

2.0

1.5

, (Normalized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. VGS = 5 V

2. ID = 4.6 A

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Ambient TemperatureFig 9. Max. Safe Operating Area

3

2

1

, Drain Current [A]

D

I

2

0

25 50 75 100 125 150

TA , Ambient Temperature [oC]

2

10

D=0.5

1

10

0.2

0.1

0.05

0

0.02

10

0.01

(t) , Thermal Response

-1

10

JA

θ

Z

-5

10

single pulse

-4

10

-3

10

t1 , Square Wave Pulse Duration [sec]

Fig 11. Thermal Response

@ Notes :

1. Z

(t)=46.3 oC/W Max.

JA

θ

2. Duty Factor, D=t1/t

3. TJM-TA=PDM*Z

P

DM

-2

10

-1

10

0

10

2

(t)

JA

θ

t

1

t

2

1

10

2

10

3

10

N-CHANNEL

POWER MOSFET

IRLM120A

Fig 12. Gate Charge Test Circuit & Waveform

5V

“ Current Regulator ”

200nF12V

3mA

Current Sampling (IG)

V

in

R

G

50KΩ

V

out

V

Same Type

GS

as DUT

300nF

V

GS

5V

DS

Q

DUT

R

1

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

out

90%

)

DS

10%

V

in

gs

t

d(on)tr

t

Q

g

Q

gd

Charge

t

d(off)

t

f

on

t

off

Vary tp to obtain required peak I

5V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

= LL I

AS

----

1 2

AS

ID (t)

t

2

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

IRLM120A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

N-CHANNEL

POWER MOSFET

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

Driver

R

G

D =

Same Type

as DUT

• dv/dt controlled by “RG”

• IS controlled by Duty Factor “D”

Gate Pulse Width

-------------------------Gate Pulse Period

L

V

DD

5V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD