Samsung irlm110a Datasheet

Advanced Power MOSFET

IRLM110A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower R

: 0.336 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (TA=25oC) Continuous Drain Current (TA=70oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) Linear Derating Factor

*

Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

I V E

I E

dv/dt

P

, T

J

T

DSS

I

D

DM

GS

AS

AR

D

STG

L

O O

O O O

BV R

DSS

DS(on)

= 100 V

= 0.44 Ω

ID = 1.5 A

SOT-223

2

1

3

1. Gate 2. Drain 3. Source

100

1.5

1.18

1

2

1 1

3

12

+

_

20

60

1.5

0.22

6.5

2.2

0.018

- 55 to +150

300

V A A

V

mJ

A

mJ

V/ns

W

W/oC

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θ

JA

Junction-to-Ambient

* When mounted on the minimum pad size recommended (PCB Mount).

*

56.8--

o

C/W

IRLM110A

N-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

BV ∆BV/∆TJ V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge

g

Gate-Source Charge Gate-Drain(“Miller”) Charge

=25oC unless otherwise specified)

C

VGS=0V,ID=250µA

100

--

1.0

--

0.09

--

2.0

180

50 20

8 10 17

8

5.5

0.9

3.5

-100

--

2.0

100

10

100

0.44

--

235

65 25 25 30 45 25

8

--

V

ID=250µA See Fig 7

V/oC

VDS=5V,ID=250µA

V

VGS=20V

nA

VGS=--20V VDS=100V

µA

µ

VDS=80V,TC=125oC

VGS=5V,ID=0.75A

Ω

VDS=40V,ID=0.75A VGS=0V,VDS=25V,f =1MHz

pF

See Fig 5

VDD=50V,ID=5.6A, RG=12

ns

See Fig 13

VDS=80V,VGS=5V,

nC

ID=5.6A

See Fig 6 & Fig 12

µ

4

O

4

O

Ω

5

O4O

5

O4O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

¨ç Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ¨è L=40mH, IAS=1.5A, VDD=25V, RG=27Ω, Starting TJ =25oC ¨é ISD 5.6A, di/dt 250A/µs, VDD BV ¨ê Pulse Test : Pulse Width = 250µs, Duty Cycle 2% ¨ë Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

_

<

--

1.5

1

--

O

4

O

, Starting TJ =25oC

_

<

DSS

_

<

--

85

--

0.23

12

1.5

--

A

V ns µC

Integral reverse pn-diode in the MOSFET TJ=25oC,IS=1.5A,VGS=0V TJ=25oC,IF=5.6A diF/dt=100A/µs

O

4

N-CHANNEL

Ω

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V Top : 7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3.0 V

-1

GS

VDS , Drain-Source Voltage [V]

1

10

0

10

, Drain Current [A]

D

I

-1

10

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRLM110A

1

10

150 oC

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

0 2 4 6 8 10

- 55 oC

VGS , Gate-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. VDS = 40 V

3. 250 µs Pulse Test

0.8

0.6

VGS = 5 V

]

, [

0.4

DS(on)

R

0.2

VGS = 10 V

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0.0 0 5 10 15 20

350

280

C

210

C

140

Capacitance [pF]

C

70

0

10

ID , Drain Current [A]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

C

= C

iss

oss

rss

VDS , Drain-Source Voltage [V]

gd

1

10

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

150 oC

DR

I

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

25 oC

@ Notes :

1. VGS = 0 V

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 2 4 6

VDS = 20 V

VDS = 50 V

VDS = 80 V

@ Notes : ID = 5.6 A

QG , Total Gate Charge [nC]

IRLM110A

θ

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

2.5

POWER MOSFET

N-CHANNEL

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. VGS = 0 V

2. ID = 250 µA

TJ , Junction Temperature [oC]

2

10

Operation in This Area is Limited by R

1

10

0

10

-1

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

0

10

, Drain Current [A]

D

-1

I

10

-2

10

DS(on)

DC

10 ms

1

10

VDS , Drain-Source Voltage [V]

1 ms

100 µs

2.0

1.5

1.0

, (Normalized)

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. VGS = 5 V

2. ID = 2.8 A

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Ambient TemperatureFig 9. Max. Safe Operating Area

1.6

1.2

0.8

, Drain Current [A]

D

0.4

I

2

10

0.0 25 50 75 100 125 150

TA , Ambient Temperature [oC]

2

10

D=0.5

0.2

1

10

0.1

0.05

0.02

0

10

0.01

(t) , Thermal Response

JA

-1

10

Z

-5

10

single pulse

-4

10

t1 , Square Wave Pulse Duration [sec]

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t1/t

3. TJM-TA=PDM*Z

-3

10

-2

10

-1

10

(t)=56.8 oC/W Max.

JA

θ

P

DM

t

1

0

10

2

(t)

JA

θ

t

2

1

10

2

10

3

10

N-CHANNEL

POWER MOSFET

IRLM110A

Fig 12. Gate Charge Test Circuit & Waveform

5V

“ Current Regulator ”

200nF12V

3mA

Current Sampling (IG)

V

in

R

G

50KΩ

V

out

V

Same Type

GS

as DUT

300nF

V

GS

5V

DS

DUT

R

1

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

out

)

DS

10%

V

in

Q

gs

90%

t

d(on)tr

Q

g

Q

gd

Charge

t

d(off)

t

on

f

t

off

Vary tp to obtain required peak I

5V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

= LL I

AS

----

1 2

AS

ID (t)

t

2

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

IRLM110A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

N-CHANNEL

POWER MOSFET

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

Driver

R

G

D =

Same Type

as DUT

• dv/dt controlled by “RG”

• IS controlled by Duty Factor “D”

Gate Pulse Width

-------------------------Gate Pulse Period

L

V

DD

5V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD