Samsung E740 Specification 2
2. Specification
2-1. GSM General Specification
GSM 900
Phase 1
Freq. Band[MHz]
Uplink/Downlink
ARFCN range 1~124
Tx/Rx spacing 45MHz 45MHz 95MHz 80MHz
Mod. Bit rate/
Bit Peri od
Time Slot
Period/Frame Period
Modulation 0.3G MSK 0.3GMSK 0.3GMSK 0.3G MSK
890~915
935~960
270.833kbps
3.692us
576.9us
4.615ms
EGSM 900
Phase 2
880~915
925~960
0~124 &
975~1023
270.833kbps
3.692us
576.9us
4.615ms
DCS1800
Phase 1
1710~1785
1805~1880
512~885 512~810
270.833kbps
3.692us
576.9us
4.615ms
PCS1900
1850~1910
1930~1990
270.833kbps
3.692us
576.9us
4.615ms
MS Power 33dBm~5dBm 33dBm~5dBm 30dBm~0dBm 30dBm~0dBm
Power Class
Sensitivity -102dBm -102dBm -100dBm -1 00dBm
TDMA Mux 8 8 8 8
Cell Radius 35Km 35Km 2Km 2Km
4
(max +33dBm)
4
(max +33dBm)
2-1
1
(max +30dBm)
1
(max +30dBm)
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Specification
2-2. GSM TX power class
TX Power
control level
533±2dBm
631±2dBm
729±2dBm
827±2dBm
925±2dBm
10 23±2 dBm
11 21±2 dBm
GSM900
TX Power
control level
0 30±3 dBm
1 28±3 dBm
2 26±3 dBm
3 24±3 dBm
4 22±3 dBm
5 20±3 dBm
6 18±3 dBm
DCS1800
TX Power
control level
030±3dBm
128±3dBm
226±3dBm
324±3dBm
422±3dBm
520±3dBm
618±3dBm
PCS1900
12 19±2 dBm
13 17±2 dBm
14 15±2 dBm
15 13±2 dBm
16 11±3 dBm
17 9±3dBm
18 7±3 dBm
19 5±3 dBm
7 16±3 dBm
8 14±3 dBm
9 12±4 dBm
10 10±4 dBm
11 8±4dBm
12 6±4 dBm
13 4±4 dBm
14 2±5 dBm
15 0±5 dBm
716±3dBm
814±3dBm
912±4dBm
10 10±4 dBm
11 8±4dBm
12 6±4 dBm
13 4±4 dBm
14 2±5 dBm
15 0±5 dBm
2-2
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This Document can not be used without Samsung's authorization
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