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BUT11/11A NPN SILICON TRANSISTOR
HIGH VOLTAGE POWER SWITCH
SWITCHING APPLI CATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Vo ltage
: BUT11
Collector Emitter Voltage
: BUT11A
: BUT11
Emitter Base Voltage
: BUT11A
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation ( T
=25&)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Typ Max Unit
*Collector-Emitter Sustaining Voltage
: BUT11A
Collector Cutoff Current
: BUT11A
Emitter Cutoff Current
Collector Emitter Saturation Voltage
: BUT11A
Base Emitter Saturation Voltage
: BUT11A
Turn On Time
Storage Time
Fall Time
V
V
V
I
I
I
I
P
T
T
: BUT11
: BUT11
: BUT11
: BUT11
CES
CEO
EBO
C
C
B
B
C
J
STG
(Tc =25&)
850
1000
400
450
9
5
10
2
4
100
150
-65 ~ 150
V
(sus)
CEO
I
CES
I
EBO
VCE(sat)
(sat)
VBE
t
ON
t
STG
t
F
V
V
V
V
V
A
A
A
A
W
&
&
IC = 100mA, IB = 0
= 850V, V
V
CE
V
= 1000V, V
CE
V
= 9V, IC = 0
BE
I
= 3A, IB = 0.6A
C
I
= 2.5A, IB = 0.5A
C
I
= 3A, IB = 0.6A
C
I
= 2.5A, IB = 0.5A
C
V
= 250V, IC = 2.5A
CC
I
1 = IB2 = 0.5A
B
BE
TO-220
1.Base 2.Collector 3.Emitter
400
450
= 0
= 0
BE
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
V
V
mA
mA
mA
V
V
V
V
uS
uS
uS
* Pulsed Test: PW = 300uS, dut y cycle = 1.5%
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BUT11/11A NPN SILICON TRANSISTOR
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