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BD440/442 PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS
• Complement to BD439, BD441 respectively
ABSOLUTE MAXIMUM RATI NGS
Characteristic Symbol Rating Unit
Collector Base Voltage
: BD440
: BD442
Collector Emitter Voltage
Collector Emitter Voltage
: BD440
: BD442
: BD440
: BD442
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
=25&)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
: BD442
: BD440
: BD442
: BD440
: BD442
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
Transition Frequency
7
Pulse Test : PW=300uS, duty Cycle=1.5% Pulsed
V
V
V
V
I
C
I
C
I
B
P
T
T
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
: BD440
CBO
CES
CEO
EBO
C
J
STG
(TC=25&)
V
I
I
I
h
VCE(sat)
V
f
-65 ~1 50
CEO
CBO
CES
EBO
FE
(on)
BE
T
(sus)
- 60
- 80
- 60
- 80
- 60
- 80
- 5
- 4
- 7
- 1
36
150
IC = - 100mA, IB = 0
= - 60V, IE = 0
V
CB
V
= - 80V, IE = 0
CB
V
= - 60V, V
CE
V
= - 80V, V
CE
V
= - 5V, IC = 0
EB
V
= - 5V, IC = - 10mA
CE
= - 1V, IC = - 500mA
V
CE
= - 1V, IC = - 2A
V
CE
= - 2A, IB = - 0.2A
I
C
V
= - 5V, IC = - 10mA
CE
V
= -1 V, IC = - 2A
CE
V
= - 1V, IC = - 250mA
CE
TO-126
V
V
V
V
V
V
1. Emitter 2.Collector 3.Base
V
A
A
A
W
&
&
- 100
- 100
- 100
- 100
V
V
uA
uA
uA
uA
mA
-60
-80
= 0
BE
= 0
BE
- 1
140
20
140
15
140
40
140
40
25
15
V
- 0.8
- 1.5
V
V
MHz
-0.58
3
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BD440/442 PNP EPITAXIAL SILICON TRANSISTOR
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