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BD439/441 NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS
• Complement to BD440, BD442 respectively
ABSOLUTE MAXIMUM RATI NGS
Characteristic Symbol Rating Unit
Collector Base Voltage
: BD439
: BD441
Collector Emitter Voltage
: BD439
: BD441
Collector Emitter Voltage
: BD439
: BD441
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
=25&)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Condition Min Typ Max Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
* Collector Emitter Saturation Voltage
*Base Emitter On Voltage
Transition Frequency
7
Pulse Test : PW=300uS, duty Cycle=1.5% Pulsed
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
-65 ~ 150
(TC=25&)
V
CEO
I
CBO
I
CES
I
EBO
h
FE
VCE(sat)
V
BE
f
T
(sus)
(on)
60
80
60
80
60
80
5
4
7
1
36
150
IC = 100mA, IB = 0
V
CB
V
CB
V
CE
V
CE
V
EB
V
CE
V
CE
V
CE
I
= 2A, IB = 0.2A
C
V
CE
V
CE
V
CE
V
V
V
V
V
V
V
A
A
A
W
&
&
= 60V, IE = 0
= 80V, IE = 0
= 60V, V
= 80V, V
= 0
BE
= 0
BE
= 5V, IC = 0
= 5V, IC = 10mA
=1V, IC = 500mA
= 1V, IC = 2A
= 5V, IC = 10mA
= 1V, IC = 2A
= 1V, IC = 250mA
TO-126
1. Emitter 2.Collector 3.Base
60
80
100
100
100
100
1
130
20
130
15
140
40
140
40
25
15
0.8
0.58
1.5
3
V
V
uA
uA
uA
uA
mA
V
V
V
MHz
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BD439/441 NPN EPITAXIAL SILICON TRANSISTOR
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