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BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS
• Complement to BD434, BD436 and BD438 respectively
ABSOLUTE MAXIMUM RATI NGS
Characteristic Symbol Rating Unit
Collector Base Voltage
: BD433
: BD435
: BD437
Collector Emitter Voltage
: BD433
: BD435
: BD437
Collector Emitter Voltage
: BD433
: BD435
: BD437
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
=25&)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Emitter Sustaining Voltage
Collector Base Voltage
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain : BD433/435
: BD437
: ALL DEVICE
: BD433/435
: BD437
* Collector Emitter Saturation Voltage : BD433
: BD435
: BD437
*Base Emitter On Voltage : BD433
: BD435
: BD437
Transition Frequency
7
Pulse Test : PW=300uS, duty Cycle=1.5% Pulsed
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
-65 ~ 150
(TC=25&)
V
I
I
I
h
VCE(sat)
V
f
CBO
CES
EBO
FE
T
CEO
BE
22
32
45
22
32
45
22
32
45
5
4
7
1
36
150
(on)
(sus)
V
V
V
V
V
V
V
V
V
V
A
A
A
W
&
&
IC = 100mA, IB = 0
V
= 22V, IE = 0
CB
V
= 32V, IE = 0
CB
V
= 45V, IE = 0
CB
V
= 22V, V
CE
V
CE
V
CE
V
EB
V
CE
V
CE
V
CE
= 2A, IB = 0.2A
I
C
V
CE
V
= 1A, IC = 250mA
CE
BE
= 32V, V
BE
= 45V, V
BE
= 5V, IC = 0
= 5V, IC = 10mA
= 1V, IC = 500mA
= 1V, IC = 2A
= 1V, IC = 2A
TO-126
1. Emitter 2.Collector 3.Base
22
32
45
= 0
= 0
= 0
130
40
130
30
140
85
50
40
0.2
0.2
0.2
3
100
100
100
100
100
100
1
0.5
0.5
0.6
1.1
1.1
1.2
V
V
V
uA
uA
uA
uA
uA
uA
mA
V
V
V
V
V
V
MHz
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BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR
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