Page 1
BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTO R
ABSOLUTE MAXIMUM RATINGS (T
Characteristic Symbol Rating Unit
Cllector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
• Refer to KS5086 for graphs
=25&)
A
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
-32
-32
-5.0
-100
350
-55 ~ 150
ELECTRICAL CHARACTERISTICS ( TA=25&)
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
BV
BV
I
h
CEO
EBO
CES
FE
:BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
Collector-Emitter Satura tion Volta ge
BCW61D
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
V
V
V
C
NF
t
t
ON
OFF
(sat)
CE
(sat)
BE
(on)
BE
OB
MARKING CODE
V
V
V
mA
mW
&
IC= -2mA, IB=0
= -1}, IC=0
I
E
= -32V, VBE=0
V
CB
V
= -5V, IC= -10
CE
V
= -5V, IC= -2mA
CE
= -5V, IC= -50mA
V
CE
= -50mA, IB= -1.25mA
I
C
I
= -10mA, IB= -0.25mA
C
I
= -50mA, IB= -1.25mA
C
I
= -10mA, IB= -0.25mA
C
V
= -5V, IC= -2mA
CE
V
= -10V, IE=0
CB
f=1MHz
I
= -0.2mA, VCE= -5V
C
=20, f=1KHz
R
G
= -10mA, IB1= -1mA
I
C
V
= -3.6V, IB2= -1mA
BB
R1=R2=50, R
}
=990
L
SOT-23
1. Base 2. Emitter 3. Collector
-32
-5
20
40
100
120
140
250
380
60
80
100
100
0.68
0.6
0.6
-20
220
310
460
630
-0.55
-0.25
1.05
0.85
0.75
150
800
V
V
nA
V
V
V
V
V
pF
6
dB
6
ns
ns
Page 2
BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR
TYPE BCW61A BCW61B BCW61C BCW61D
MARK. BA BB BC BD
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