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BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
g
SWITCHING AND AMPLIFIER APPLICATIONS
• Sutable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
ABSOLUTE MAXIMUM RATINGS (TA=25&)
Characteristic Symbol Rating Unit
Collector Emitter Voltage :BC807
:BC808
Collector Emitter Volta
e :BC807
:BC808
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipatio n
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Volta ge
Current Gain Bandwidth Product
Collector-Base Capacitance
V
V
V
I
P
T
T
:BC807
:BC808
:BC807
:BC808
FE
CE
BE
CBO
CEO
CES
EBO
2
-65 ~ 150
=25&)
A
(sat)
(on)
-50
-30
-45
-25
-5
-800
-310
150
IC= -10mA, IB=0
I
C
I
E
V
V
V
V
I
C
V
V
f=50MHz
V
CES
CEO
EBO
C
C
J
STG
BV
BV
BV
I
CES
I
EBO
hFE1
h
V
V
f
T
C
V
V
V
V
V
mA
mW
&
&
= -0.1mA, IB=0
= -0.1mA, IC=0
= -25V, IB=0
CE
= -4V, IC=0
EB
= -1V, IC= -100mA
CE
= -1V, IC= -300mA
CE
= -500mA, IB= -50mA
= -1V, IC= -300mA
CE
= -5V, IC= -10mA
CE
= -10V, f=1MHz
CB
SOT-23
1. Base 2. Emitter 3. Collector
-45
-25
-50
-30
-5
100
60
100
V
V
V
V
V
-100
-100
nA
nA
630
-0.7
-1.2
V
V
MHz
pF
12
CLASSIFICATIO N
h
FE
Classification 16 25 40
hFE1 100-250 160-400 250-630
hFE2 60- 100- 170-
MARKING CODE
TYPE 807-16 807-25 807-40 808-16 808-25 808-40
MARKING 9FA 9FB 9FC 9GA 9GB 9GC
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BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
Page 3
BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
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