SamHop Microelectronics SDD40N03L, SDU40N03L Datasheet

S DU/D40N03L

S amHop Microelec tronics C orp.

Augus t , 2002

N-C hannel Logic Level E nhancement Mode Field E ffect T ransis tor

PR ODUC T S UMMAR Y

VDS S

30V

ID

40A

R DS (O N) ( m

9 @ VGS = 10V

13 @ V GS = 4. 5V

D

G

S

S DU S E R IE S
TO-252AA(D-P AK )

W

) TYP

G

D

S

S DD SE RIE S
TO-251(l-P AK)

ABS OLUT E MAXIMUM R ATINGS (TC=25 C unless otherwise noted)

F E ATUR ES

S uper high dense cell design for low R

R ugged and reliable.

TO-252 and T O -251 P ackage.

D

G

S

DS (O N

).

P a rameter

Drain-S ource Voltage

G ate-S ource Voltage 20

Drain C urrent-C ontinuous @ T J =125 C

-P ulsed

a

Drain-S ource Diode F orward C urrent 40

Maximum P ower Dissipation

@ T c=25 C

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

120

Derate above 25 C

Opera ting and S torage

Temperature R ange

TJ, T

S TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C as e

Thermal R esistance, J unction-to-Ambient

R

R

J C

J A

Limit Unit

30

V

V

40

A

A

A

50

0.3

3

50

W

W / C

C

C

C

/W

/W

1

S DU/D40N03L

E LE C T R IC AL C HAR AC TE R IS T IC S (T C =25 C unles s otherwis e noted)

P arameter

OF F C HAR AC TE R IS TIC S

Drain-S ource B reakdown Voltage

S ymbol

B V

DS S

C ondition

V

G S

= 0V, ID = 250uA

Min

30

Typ

Max

Unit

V

Zero G ate Voltage Drain C urrent

G ate-B ody Leakage

ON C HAR AC T E R IS TIC S

a

G ate T hreshold Voltage

Drain-S ource On-S tate R esistance

On-S tate Drain C urrent

DYNAMIC C HAR AC TE R IS TIC S

b

Input C apacitance

Output C apacitance

R evers e T rans fer Capacitance

S WIT C HING C HAR AC T E R IS TIC S

b

I

I

V

G S (th)

R

DS (ON)

I

D(ON)

g

C

C

C

DS S

G S S

F S

IS S

OS S

R S S

V

DS

= 24V, V

V

G S

= 20V, V

V

DS

= V

G S

, ID = 250uA

V

G S

= 10V, ID =20A

V

G S

= 4.5V, ID = 10A

V

DS

= 10V, V

V

DS

= 10V, ID = 20A

V

DD

=15V, V

f = 1.0MH

Z

GS

G S

G S

= 0V

DS

= 0V

= 10V

= 0V

1 1.5

40

9

13

30

1375

670

200

10

100

3

10

16

uA

nA

V

m ohm

m ohm

A

SF orward Trans conductance

P

F

P

F

P

F

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F a ll time

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

t

D(ON)

t

t

D(OFF)

t

Q

Q

Q

VDD = 15V,

r

ID =1A,
V
R

f

VDS = 10V,ID = 40A,V

g

VDS = 10V,ID = 40A,V

gs

gd

VDS = 10V, ID = 40A,
V

2

G S

G E N

G S

= 10V,

= 6

=10V

ohm

G S

=10V

G S

=4.5V

30

32

132

30

40

19.5

8.2

5.3

50

23.5

ns

ns

ns

ns

nC

nC

nC

nC