SDU/D30N03L
SamHop Microelectronics Corp.
JULY, 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
30V
30A
I
D
G
R
DS(ON) (mW ) TYP
11.5 @ V
17 @ VGS = 4.5V
S
SDU SERIES
TO-252AA(D-PAK)
GS
= 10V
D
G
D
S
SDD SERIES
TO-251(l-PAK)
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Symbol
Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @TJ=125 C
-Pulsed
a
Drain-Source Diode Forward Current 30
Maximum Power Dissipation
@Tc=25 C
V
V
I
DS
GS
I
D
DM
I
S
D
P
Derate above 25 C
Operating and Storage
Temperature Range
T
J
, T
STG
-55 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
R
R
JC
JA
30
20
30
90
50
0.3
3
50
V
V
A
A
A
W
W/ C
C
C
/W
C
/W
SDU/D30N03L
ELECTRICAL CHARACTERISTICS (T
Parameter
Symbol
C
=25 C unless otherwise noted)
Condition
Min
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
a
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
BV
DSS
DSS
I
I
GSS
V
GS(th)
DS(ON)
R
D(ON)
I
g
FS
b
= 0V, ID = 250uA
V
DS
= 24V, V
V
GS
= +/-20V, V
V
DS
= VGS, ID = 250uA
V
GS
= 10V, ID =15A
V
GS
= 4.5V, ID = 12A
V
DS
= 10V, V
V
DS
= 10V, ID = 20A
GS
= 0V
DS
GS
= 10V
= 0V
30
1 1.5
40
30
V
GS
DYNAMIC CHARACTERISTICS
Typ
11.5
17
Max
Unit
10
+/-100
3
m ohm
14
m ohm
21
V
uA
nA
V
A
SForward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
DD
=15V, V
V
C
OSS
C
RSS
b
f = 1.0MH
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
D(ON)
t
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
DD
= 15V,
V
I
D
=1A,
GS
= 10V,
V
R
GEN
= 6
VDS = 15V, ID = 15A,
V
GS
=10V
2
GS
Z
ohm
= 0V
1200
530
150
5
65
67
90
34.4
5.1
7.7
F
P
P
F
P
F
ns
ns
ns
ns
nC
nC
nC
SDU/D30N03L
ELECTRICAL CHARACTERISTICS (T
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
Symbol
C
=25 C unless otherwise noted)
Condition
a
V
SD
VGS = 0V, Is = 25A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
50
40
30
20
, Drain Current (A)
10
D
I
0
0123 4 56
VGS=10,9,8,7,6,5,4V
VGS=3V
40
30
20
10
, Drain Current (A)
D
0
0123456
Tj=125 C
Min
25 C
-55 C
Typ
Max
1.3
Unit
V
6
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
V
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
3000
2500
2000
1500
1000
500
C, Capacitance (pF)
0
0 5 10 15 20 25 30
VDS, Drain-to Source Voltage (V)
Ciss
Coss
Crss
Figure 3. Capacitance
1.3
VGS=10V
1.2
Tj=125 C
25 C
-55 C
, Normalized
DS(ON)
Drain-Source, On-Resistance I
R
1.1
1.0
0.9
0.8
0.7
01020 3040
I
D
, Drain Current(A)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
3
SDU/D30N03L
6
1.15
1.10
1.05
1.00
0.95
Vth, Normalized
0.90
0.85
Gate-Source Threshold Voltage
0.80
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
VDS=V
ID=250uA
Figure 5. Gate Threshold Variation
with Temperature
60
VDS=10V
50
40
30
20
, Transconductance (S)
10
FS
g
0
0 5 10 15 20
GS
1.15
1.10
1.05
1.00
, Normalized
0.95
DSS
BV
0.90
Drain-Source Breakdown Voltage
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
ID=250uA
Figure 6. Breakdown Voltage Variation
with Temperature
40
10
1.0
Is, Source-drain current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
10
VDS=15V
8
D
=20A
I
6
4
, Gate to Source Voltage (V)
2
GS
V
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge (nC)
Figure 9. Gate Charge
4
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
300
200
100
(ON) Limit
DS
R
10
, Drain Current (A)
D
I
0.5
1
0.1
VGS=10V
Single Pulse
Tc=25 C
VDS, Drain-Source Voltage (V)
1103060
DC
1ms
10ms
100ms
1s
Figure 10. Maximum Safe
Operating Area
SDU/D30N03L
DD
V
on
t
d(off)
t
r
d(on)
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
t
OUT
V
IN
V
10%
t
90%
10% 10%
INVERTED
50% 50%
PULSE WIDTH
90%
t
off
f
t
90%
6
Figure 11. Switching Test Circuit
2
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
-5
10
0.01
SINGLE PULSE
-4
10
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13. Normalized Thermal Transient Impedance Curve
Figure 12. Switching Waveforms
-3
10
Square Wave Pulse Duration (sec)
-2
10
DM
P
1
t
2
t
1. R
£cJA
(t)=r (t) * R
2. R
£cJA
=See Datasheet
JM-TA
3. T
4. Duty Cycle, D=t
-1
10
£cJA
= PDM* R
£cJA
(t)
1/t2
110
5
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