SamHop Microelectronics SDB65N03L, SDP65N03L Datasheet

S amHop Microelectronics C orp.

S DP /B65N03L

S eptember , 2002

4

PR ODUC T S UMMAR Y

VDS S

30V

ID

65A

D

G

S

S DB S E RIE S
TO-2 63(DD-PAK)

R DS (on) ( m

12 @ VGS = 4. 5V

W

) T YP

8 @ VGS = 10V

G

D

S

S DP S E RIE S
TO-2 20

F E ATUR E S

S uper high dense cell design for extremely low R DS (ON).

High power and current handling capability.

TO-220 & TO-263 package.

D

G

S

ABS OLUTE MAX IMUM R ATING S (TC =25 C unless otherwise noted)

P arameter

Drain-S ource Voltage

S ymbol

V

DS

Limit Unit

30

V

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =125 C

-P ulsed

a

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ T c=25 C

Derate above 25 C

Operating and S torage

Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R es is tance, J unction-to-C a s e

Thermal R es is tance, J unction-to-Ambient

V

I

P

TJ, T

R

R

G S

I

D

DM

I

S

D

1

S TG

J C

J A

20

65

195

65

75

0.5

-65 to 175

2

62.5

V

A

A

A

W

W / C

C

C

/W

C

/W

S DP /B 65N03L

E LE C T R IC AL C H AR AC T E R IS T IC S (T C 25 C unless otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

OF F CHAR ACT E R IS T IC S

Drain-S ource B reakdown Volta ge

Zero G ate Voltage Drain Current

G a te-Body Leakage

ON C HAR AC TE R IS TIC S

a

G a te T hres hold Voltage

Drain-S ource On-S tate R es istance

On-S ta te Drain C urrent

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

b

VDS 24V, V

V

G S

V

DS VG S

V

G S =

V

G S =

V

DS

V

DS =

=

=

G S

= =

=

=

0V

20V, VDS 0V

=

, ID = 250uA

10V, ID = 26A

4.5V, ID = 21A

= 10V, V

G S

= 10V

10V, ID = 26A

30

1 1.5 3

65

8

12

38

V

G S

DYNAMIC C HAR AC TE R IS TICS

C

Max

10

100

9

15

Unit

V

uA

nA

V

m ohm

m ohm

A

SF orward Transconductance

4

Input C apacitance

Output C apacitance

R evers e Transfer C apacitance

S WIT C HING C HAR AC TE R IS TIC S

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F all Time

Total G ate Charge

G a te-S ource C harge

G a te-Drain C harge

b

C

IS S

C

OS S

C

R S S

t

D(ON)

t

t

D(OFF)

t

Q

Q

Q

V

f =1.0MH

VDD = 15V,

r

ID = 1A,
V
R

f

VDS =10V, ID =65A,V

g

VDS =10V, ID =65A,V

gs

gd

VDS =10V, ID = 65A,
V

DS

=15V, V

G S

= 10V

G E N

G S

=10V

2

= 6

G S

Z

ohm

= 0V

G S

G S

=10V

=4.5V

1350

625

190

30

32

132

30

50

41

20.5 24.5

6.9

5.8

P

F

P

F

P

F

ns

ns

ns

ns

nC

nC

nC

nC