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SDM9435A

Datasheet SDM9435A Datasheet (SamHop Microelectronics)

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S DM9435A
S amHop Microelectronics C orp.
PR ODUC T S UMMAR Y
VDS S
-30V
ID
-5. 3A
R DS (O N) ( m
40 @ VG S = -10V
67 @ VG S = -4.5V
S O-8
W
) TY P
1
F E AT U R E S
S uper high dens e cell design for low R
R ugged and reliable.
S urface Mount P ackage.
D D D D
8 7 6 5
1 2 3 4
S S S G
AB S OLU TE MAXIMUM R ATING S (TA=25 C unles s otherwise noted)
Augus t , 2002
DS (O N
).
5
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P uls ed
Drain-S ource Diode F orward C urrent
Maximum P ower Dis s ipation
a
b
a
a
Operating J unction and S torage Tempera ture R ange
THE R MAL C HAR AC T E R IS TIC S
Thermal R esis tance, J unction-to-Ambient
S ymbol
V
DS
V
G S
I
D
I
DM
I
S
P
D
TJ, T
S TG
a
R
J A
30
20
5.3
20
1.9
2.5
-55 to 150
50
V
V
A
A
A
W
C
C
/W
1
S DM9435A
E LE C T R IC AL C HAR AC TE R IS TIC S (T A 25 C unles s otherwis e noted)
P arameter
5
OF F C HAR AC T E R IS TIC S
Drain-S ource B reakdown Voltage
Zero G ate Voltage Drain C urrent
G ate-B ody Leakage
ON C HAR AC TE R IS TIC S
G ate T hres hold Voltage
Drain-S ource On-S tate R esis tance
On-S tate Drain C urrent
b
S ymbol
c
B V
I
I
V
G S (th)
R
DS (ON)
I
D(ON)
g
DS S
DS S
G S S
F S
=
C ondition
V
G S
0V, ID -250uA
=
VDS -24V, V
= =
V
G S
20V, VDS 0V
=
V
DS VG S
=
=
V
G S
-10V, I
V
G S
-4.5V, I
=
V
DS
= -5V, V
= =
V
DS
-15V, I
=
G S
0V
=
, ID = -250uA
=
D
-5.3A
D
-4.2A
=
G S
= -10V
D
- 5.3A
Min
-30
-1 -1.5 -3
-20
Typ
40
67
9
C
Max
-1
100
50
90
Unit
V
uA
nA
V
m-ohm
m-ohm
A
SF orward Tra nsconductance
DY NAMIC C HAR AC TE R IS TIC S
Input C apacitance
Output C apacitance
R everse Trans fer C apacitance
S WITC HING C HAR AC T E R IS TIC S
Turn-On Delay Time
R ise Time
Turn-Off Delay T ime
F all Time
Total G ate C harge
G ate-S ource C harge
G ate-Drain C harge
c
C
IS S
C
OS S
C
R S S
t
D(ON)
t
t
D(OF F)
t
Q
Q
Q
V
DS
f =1.0MH
VD = -15V,
r
f
g
ID = -1A, V
G E N
R
G E N
V
DS
=-15V,ID =-5.3A,V
VDS =-15V,ID =-5.3A,V
gs
gd
VDS =-15V, ID = -5.3A, V
G S
2
=-15V, V
Z
= - 10V,
= 6 -ohm
=-10V
G S
= 0V
G S
=-10V
G S
=-4.5V
860
470
180
20 ns
9
10 40
37
90
23 110
20
15
8.7 10.5
3
4
P
P
P
ns
ns
ns
nC
nC
nC
nC
F
F
F
S DM9435A
E LE C T R IC AL C HAR AC T E R IS T IC S (TA=25 C unless otherwis e noted)
P a rameter
S ymbol
C ondition
Min
Typ
C
Max
Unit
DR AIN -S OUR C E DIODE C H AR AC T E R IS T IC S
Diode F orward V oltage
Notes a.S urface Mounted on F R 4 Board, t <=10sec.
b.P ulse Tes t:P uls e Width<=300us , Duty C ycle<= 2%. c.G uaranteed by des ign, not s ubject to production tes ting.
25
20
-V GS =10, 9,8, 7,6, 5V
15
10
5
-ID , Dra in C urrent (A)
0
0 0. 5 1. 0 1. 5 2.0 2. 5 3 .0
-V DS , D rain-to-S ource Voltage (V )
F igure 1. Output C haracteristics
V
S D
4V
3V
b
V
G S
= 0V, Is =-5. 3A
20
16
12
8
4
-ID , Dra in C urrent (A)
0
0 0 .5 1 1. 5 2 2. 5 3
F igure 2. Trans fer C ha ra cteris tics
-0.84
-55 C
25 C
T j=12 5 C
-V GS , Ga te-to-S ource Voltage ( V )
-1.3
5
V
300 0
250 0
200 0
150 0
100 0
C , C apa cita nce (pF )
500
0
0 5 10 15 20 25 30
-V DS , D rain-to S ource Voltage ( V )
F igure 3. C apacitance
C iss
C oss
C rss
1. 8 VGS =-10V
ID=-5. 3A
1. 6
1. 4
1. 2
1. 0
On-R es istance(Ohms)
(N ormalized)
0. 8
R DS (O N),
0. 6
-50 0 50 100 150
Tj, J unction Temperature ( C )
F igure 4. On-R esistance Va ria tion with
Tempera ture
3
S DM9435A
1.09
VDS=V
1.06
1.03
1.00
5
0.97
Vth, Norma lized
0.94
G ate-S ource T hreshold V oltage
0.91
-50 -25 0 25 50 75 100 125 150
G S
ID=-250uA
Tj, J unction Temperature ( C )
F igure 5. G ate T hres hold V a ria tion
with T emperature
15
12
9
6
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
B V DS S , Normaliz ed
0.85
Dra in-S ource Brea kdown V oltage
-50 -25 0 25 50 75 100 1 25 150
Tj, J unction Temperature ( C )
F igure 6. B reakdown V oltage V a ria tion
with T emperature
20. 0
V
G S
=0V
10. 0
3
gFS , T rans conductanc e (S )
0
0 5 10 15 20
-ID S, Dra in-S ource C urrent (A )
VDS=-15V
F igure 7. T ra ns conductance V ariation
with Drain C urrent
10
VDS=-15V
8
ID=-5. 3A
6
4
2
VG S, G ate to S ource V oltage ( V )
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge ( nC )
F igure 9. G ate C harge
4
-Is , S ource-dra in curre nt (A)
1.0
0.4 0 .6 0.7 0 .9 1.1 1.3
-V S D, B ody Diode F orwa rd Voltage (V )
F igure 8. B ody Diode F orward V oltage
Variation with S ource C urrent
50
10
(O N) L imit
S
D
R
1
V
G S
0.1
-ID , D rain C urrent (A)
0.03
=-10V
S ingle P ulse
TA=25 C
0.1 1 10 30 50
-V DS , D rain-S ource V oltage (V )
10ms
100 m
s
1s
DC
F igure 10. Maximum S afe Operating Area
S DM9435A
DD
-V
on
t
d(off)
t
r
d(on)
R
IN
V
V
G S
G EN
R
G
L
D
OU T
V
S
t
OU T
V
IN
V
10%
t
90%
10% 10%
50% 50%
INVE R TE D
P ULS E W IDT H
90%
t
off
f
t
90%
5
F igure 11. S witching T es t C ircuit
2
1
Duty C yc le=0.5
0. 2
0. 1
0. 1
0. 05
0. 01
0. 02
S ingle P ulse
-4
10
-3
10
r(t), Normaliz ed Effective
T rans ient Therma l Impeda nce
F igure 13. Norma lized T hermal Trans ient Impedance C urve
F igure 12. S witching Waveforms
-2
10
S quare W ave P ulse Dura tion (s ec )
-1
10
DM
P
1
t
2
t
1. R thJA ( t) =r (t) * RthJ A
2. R thJA=S ee Datas heet
3. TJ M-T A = PDM* R thJ A ( t)
4. Duty C ycle , D=t1/t2
1 10 100
5
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