S DM6912
S amHop Microelec tronics C orp.
P RE LIMI NAR Y
Dual N-C hannel E nhancement Mode Field E ffect T ransis tor
PR ODUC T S UMMAR Y
VDS S
30V
ID
7A
R DS (O N) ( m
30 @ VGS = 10V
50 @ VGS = 4.5V
S O-8
1
W
) Max
ABS OLUT E MAX IMUM R ATINGS (TA=25 C unless otherwis e noted)
F E ATUR E S
S uper high dense cell design for low R
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S 1 G 1 S 2 G 2
DS (O N
).
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P uls ed
Drain-S ource Diode F orward C urrent
Maximum P ower Dis s ipation
a
b
(300us Puls e Width)
a
a
Opera ting J unction a nd S torage
Temperature R ange
THE R MAL C HAR AC T E R IS T IC S
Thermal R es is tance, J unction-to-Ambient
S ymbol
V
DS
V
G S
I
D
I
DM
I
S
P
D
TJ, T
S TG
a
R
J A
Limit Unit
30
20
7.0
28
2.8
2.5
-55 to 150
50
V
V
A
A
A
W
C
C
/W
1
S DM6912
N-C ha nnel E LE C T R IC AL C HAR AC T E R IS TIC S (T A 25 C unles s otherwis e noted)
P arameter
S ymbol
C ondition
=
Min
Typ
C
Max
Unit
OF F C HAR AC TE R IS TICS
Drain-S ource Breakdown Voltage
Zero G ate Voltage Drain C urrent
G ate-B ody Leakage
ON C HAR AC TE R IS TIC S
b
G ate Threshold Voltage
Drain-S ource On-S tate R es istance
On-S tate Drain C urrent
0V, ID 250uA
B V
DS S
I
DS S
I
G S S
V
G S (th)
R
DS (ON)
I
D(ON)
g
F S
c
VDS 24V, V
V
G S
V
DS VG S
V
G S
V
G S
V
DS
V
DS
=
=
= =
=
=
=
=
= 5V, V
= =
G S
20V, VDS 0V
, ID = 250uA
10V, I
D
=
4.5V,I
D
=
G S
5V, I
D
6.0A
0V
=
6.0A
5.0A
=10V
30
1 1.8
30
16
1
100
3
30
50
V
uA
nA
V
m ohm
m ohm
A
SF orward Trans conductance
V
G S
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
Output C apacitance
R evers e Trans fer C apacitance
S WIT C HING C HAR AC T E R IS TICS
Turn-O n Delay Time
R ise Time
Turn-O ff Delay Time
F a ll Time
Total G ate C harge
G ate-S ource C harge
G ate-Drain C harge
P
C
IS S
V
DS
=15V, V
C
OS S
C
R S S
c
t
D(ON)
t
r
t
D(OFF)
t
f
f =1.0MH
VDD = 15V,
ID = 1A,
V
G E N
RL = 15 W
R
G E N
VDS =15V, ID = 1A,V
Q
g
VDS =15V, ID = 1A,V
Q
Q
gs
gd
VDS =15V, ID = 1A,
V
G S
=10V
2
Z
= 10V,
= 10 W
G S
= 0V
G S
G S
=10V
=4.5V
510
235
56
40 ns
21
20 40
27
55
115 230
13
20
10
6
2.1
2
F
P
F
P
F
ns
ns
ns
nC
nC
nC
nC
S DM6912
E LE C T R IC AL C HAR AC TE R IS T IC S (TA=25 C unless otherwise noted)
P a rameter
S ymbol
C ondition
Min
Typ
C
Max
Unit
DR AIN-S OUR C E DIODE C HAR AC T E R IS TIC S
Diode F orwa rd Volta ge
Notes
a.S urface Mounted on F R 4 B oard, t 10s ec.
b.Puls e Test:P uls e W idth 300us , Duty C ycle 2%.
c.G uaranteed by design, not subject to production tes ting.
25
VGS=10, 9,8, 7,6,5, 4V
20
15
10
5
ID, Drain Current(A)
0
0 0. 5 1 1. 5 2 2 .5 3
VDS , Drain-to-S ource Voltage (V)
F igure 1. Output C haracteris tics
V
VGS =3V
S D
b
V
G S
= 0V, Is =5.0A
25
20
15
10
5
ID, Dra in C urrent ( A)
0
0. 0 1. 0 2. 0 3.0 4. 0 5.0 6 .0
1.1
0.76
25 C
T j=12 5 C
-55 C
VGS , G ate-to-S ource Volta ge (V )
F igure 2. Trans fer C hara cteristics
V
120 0
100 0
800
600
400
C , C apa cita nce (pF )
200
0
0 5 1 0 15 2 0 25 30
VDS , Drain-to S ource Voltage ( V)
C iss
C oss
C rss
F igure 3. Capa citance
On-R esistanc e(Ohms)
R DS (O N),
0. 030
0. 025
0. 020
0. 015
0. 010
0. 005
VGS =10V
T j=12 5 C
0
0 5 10 15 2 0
ID, Dra in C urrent(A)
F igure 4. On-R esistance Va riation with
Drain C urrent and Temperature
3
25 C
-55 C
S DM6912
1.09
1.06
1.03
1.00
0.97
Vth, N ormalized
0.94
0.91
G ate-S ource T hreshold Voltage
-50 -25 0 25 50 75 100 125 150
VDS=V
ID=250uA
Tj, Junction T emperature ( C )
F igure 5. Gate T hreshold V ariation
with Temperature
25
20
15
10
1.15
G S
B VDS S, Normalized
Dra in-S ource B rea kdown V oltage
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction T emperature ( C )
F igure 6. Brea kdown Voltage V ariation
with Temperature
40. 0
10. 0
5
gFS , T ransconductance (S )
0
0 5 10 15 20
VDS=15V
IDS , Drain-S ource C urrent (A)
F igure 7. Trans conductance V ariation
with Dra in Current
10
VDS=15V
ID=1A
8
6
4
2
VGS , G ate to S ource V oltage (V )
0
0 2 4 6 8 10 12 14 16
Qg, Total G ate C harge (nC)
F igure 9. Gate C harge
4
Is , S ource-drain current ( A)
1.0
0.4 0. 6 0.8 1. 0 1.2 1.4
VS D, Body Diode F orward Voltage (V)
F igure 8. Body Diode F orward V oltage
Variation with S ource C urrent
40
10
1
0.1
ID, Dra in C urrent (A )
0.03
t
mi
Li
ON )
(
S
D
R
1
0
m
s
1
0
0
ms
1
V
G S
=10V
1s
DC
S ingle P ulse
TA=25 C
0.1 1 10 30 50
VDS , Drain-S ource Voltage ( V)
F igure 10. Ma ximum S afe
Operating Area
S DM6912
DD
V
on
t
d(off)
t
r
R
IN
V
V
G S
G EN
R
G
L
D
OU T
V
S
t
V
V
d(on)
OU T
IN
10%
t
90%
10% 10%
INVE R T E D
50% 50%
P ULS E W IDT H
90%
t
off
f
t
90%
F igure 11. S witching T est Circuit
2
1
Duty C yc le=0.5
0. 2
0. 1
0. 1
0. 05
0. 01
0. 02
S ingle P ulse
-4
10
-3
10
r(t), Norma lized E ffective
T rans ient Thermal Impedance
F igure 13. Normalized Therma l Trans ient Impedance C urve
F igure 12. S witching Waveforms
-2
10
S quare W ave P ulse Dura tion (s ec)
-1
10
DM
P
1
t
2
t
1. R qJA (t)=r (t) * R qJA
2. R qJA=S ee Data shee t
3. TJ M-T A = PDM* R qJA ( t)
4. Duty C ycle , D=t1/t2
1 10 100
5
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