SamHop Microelectronics SDM4952 Datasheet
S DM4952
S amHop Microelectronics C orp.
March , 2003
Dual P -C hannel E nhancement Mode F ield E ffect T ransistor
PR ODUC T S UMMAR Y
VDS S
-20V
ID
-5.3A
R DS (O N) ( m
50 @ V GS = -4.5V
75 @ V GS = -2.7V
S O-8
1
W
) MAX
AB S OLUTE MAXIMUM R ATING S (TA=25 C unles s otherwise noted)
F E ATUR E S
S uper high dens e cell design for low R
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S 1
G 1
S 2
G 2
DS (O N
).
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed
Drain-S ource Diode F orward C urrent
Maximum P ower Diss ipation
a
b
(300us P ulse Width)
a
a
Operating J unction and S torage
Tempera ture R ange
THE R MAL C HAR AC T E R IS TIC S
Thermal R es istance, J unction-to-Ambient
S ymbol
V
DS
V
G S
I
D
I
DM
I
S
P
D
TJ, T
S TG
a
R
J A
Limit Unit
-20
12
5.3
21
2.5
2
-55 to 150
62.5
V
V
A
A
A
W
C
C
/W
1
S DM4952
E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)
P arameter
S ymbol
=
C ondition
Min
Typ
OF F C HAR AC T E R IS TIC S
Drain-S ource B reakdown Voltage
Zero G ate Voltage Drain C urrent
G ate-B ody Leakage
ON C HAR AC T E R IS TIC S
b
G ate T hreshold Voltage
Drain-S ource On-S tate R es istance
On-S tate Drain C urrent
0V, ID -250uA
B V
DS S
I
DS S
I
G S S
V
G S (th)
R
DS (ON)
I
D(ON)
g
F S
c
VDS -16V, V
V
G S
V
DS VG S
V
GS
V
GS
V
DS
V
DS
=
=
= =
=
=
=
=
= -5V, V
= =
G S
12V, VDS 0V
, ID = -250uA
=
-4.5V, I
D
-2.7V, I
D
=
G S
-15V, I
D
0V
=
-2.9A
-1.5A
= -4.5V
- 4.9A
-20
-0.7
-20
13
V
G S
DY NAMIC C HAR AC T E R IS TIC S
C
Max
-1
100
50
75
Unit
V
uA
nA
V
m-ohm
m-ohm
A
SF orward Transconductance
Input C apacitance
Output C apacitance
R everse Transfer C apacitance
S WITC HING C HAR AC T E R IS TIC S
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
F all Time
Total G ate C harge
G ate-S ource C harge
G ate-Dra in C harge
c
C
IS S
C
OS S
C
R S S
t
D(ON)
t
t
D(OF F)
t
Q
Q
Q
r
f
gs
gd
P
P
P
ns
ns
F
F
F
V
DS
=-10V, V
f =1.0MH
Z
VD = -10V,
RL =10 ohm
G S
= 0V
1190
700
250
19
18 70
40
ID = -1A,
120
V
G E N
= -4.5V,
R
G E N
=6 ohm
g
49
28 130
20
25
ns
ns
nC
VDS =-10V, ID = - 1A,
2
V
G S
=-4.5V
3.7
4.2
nC
nC
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