SamHop Microelectronics SDD9916, SDU9916 Datasheet
S DU/D9916
S amHop Microelectronics C orp.
N-C hannel E nhancement Mode Field E ffect Transistor
PR ODUC T SUMMAR Y
VDS S
20V
ID
20A
R DS (O N) ( m
25 @ V GS = 4. 5V
35 @ V GS = 2. 7V
D
G
S
S DU S E RIE S
TO-252AA(D-PAK )
W
) TY P
G
D
S
S DD SE R IE S
TO-251(l-PA K)
ABS OLUTE MAX IMUM R ATINGS (TA=25 C unless otherwise noted)
F E ATUR E S
S uper high dense cell des ign for low R
R ugged and relia ble.
TO-252 and T O -251 P ackage.
D
G
S
August , 2002
DS (O N
).
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
Drain C urrent-Continuous @ T J =125 C
-P ulsed
a
Drain-S ource Diode F orward C urrent 20
Maximum P ower Dissipa tion
@ Tc=25 C
S ymbol
V
DS
V
G S
I
D
I
DM
I
S
P
D
Derate above 25 C
Operating and S torage
Temperature R ange
TJ, T
S TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
Thermal R esistance, J unction-to-Ambient
R
R
J C
J A
Limit Unit
20
12
20
60
V
V
A
A
A
50
0.4
3
50
W
W / C
C
C
C
/W
/W
1
S DU/D9916
E LE C T R IC AL C HAR AC T E R IS TIC S (T A 25 C unles s otherwis e noted)
P arameter
S ymbol
=
C ondition
Min
Typ
OF F C HAR AC TE R IS TIC S
Drain-S ource Breakdown Voltage
Zero G ate Voltage Drain Current
G ate-Body Leakage
ON C HAR ACT E R IS TIC S
b
G ate Threshold Voltage
Drain-S ource On-S tate R es is tance
On-S tate Drain C urrent
0V, ID 250uA
B V
DS S
I
DS S
I
G S S
V
G S (th)
R
DS (ON)
I
D(ON)
g
F S
c
VDS 20V, V
V
G S
V
DS VG S
V
G S
V
G S
V
DS
V
DS
=
=
= =
=
G S
8
V, VDS 0V
=
, ID = 250uA
=
=
= 5V, V
= =
4.5V, I
2.5V, I
10V, I
D
D
G S
D
=
=
= 4.5V
0V
=
6.0A
5.2A
6.0A
20
0.9
20
1.0
25
35
247
V
G S
DYNAMIC C HAR AC TE R IS TIC S
C
Max
1
100
1.5
30
40
Unit
V
uA
nA
V
m ohm
m ohm
A
SF orward Transconducta nce
Input C apacitance
Output C apacitance
R evers e Trans fer C apa citance
S WIT C HING CHAR AC TE R IS TIC S
Turn-On Delay Time
R ise Time
Turn-Off Delay T ime
F all Time
Total G a te C harge
G ate-S ource Charge
G ate-Drain Charge
P
C
IS S
V
DS
=10V, V
G S
= 0V
C
OS S
C
R S S
c
t
D(ON)
t
r
t
D(OFF )
t
f
Q
g
f =1.0MH
VDD = 10V,
ID = 1A,
V
G E N
= 4.5V,
G E N
ohm
= 6
RL = 10
R
Z
ohm
VDS =10V, ID = 6A,
Q
Q
gs
gd
2
V
G S
=4.5V
650
270
80
6.5
11.5
12
12 20
10
2.8
2.6
14 ns
23
25
15
F
P
F
P
F
ns
ns
ns
nC
nC
nC
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