SamHop Microelectronics SDD30N03L, SDU30N03L Datasheet

SDU/D30N03L

SamHop Microelectronics Corp.

JULY, 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

V

DSS

30V

30A

I

D

G

R

DS(ON) (mW ) TYP

11.5 @ V
17 @ VGS = 4.5V

S

SDU SERIES
TO-252AA(D-PAK)

GS

= 10V

D

G

D

S

SDD SERIES
TO-251(l-PAK)

FEATURES

Super high dense cell design for low R

DS(ON

).

Rugged and reliable.
TO-252 and TO-251 Package.

D

G

S

ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)

Parameter Symbol

Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous @TJ=125 C

-Pulsed

a

Drain-Source Diode Forward Current 30
Maximum Power Dissipation

@Tc=25 C

V
V

I

DS
GS

I

D

DM

I

S

D

P

Derate above 25 C

Operating and Storage

Temperature Range

T

J

, T

STG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient

1

R
R

JC

JA

30

20

30

90

50

0.3

3

50

V
V

A
A

A

W

W/ C

C

C

/W

C

/W

SDU/D30N03L

ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol

C

=25 C unless otherwise noted)

Condition

Min

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICS

a

Gate Threshold Voltage
Drain-Source On-State Resistance

On-State Drain Current

BV

DSS

DSS

I
I

GSS

V

GS(th)

DS(ON)

R

D(ON)

I

g

FS

b

= 0V, ID = 250uA

V

DS

= 24V, V

V

GS

= +/-20V, V

V

DS

= VGS, ID = 250uA

V

GS

= 10V, ID =15A

V

GS

= 4.5V, ID = 12A

V

DS

= 10V, V

V

DS

= 10V, ID = 20A

GS

= 0V

DS

GS

= 10V

= 0V

30

1 1.5

40

30

V

GS

DYNAMIC CHARACTERISTICS

Typ

11.5
17

Max

Unit

10

+/-100

3

m ohm

14

m ohm

21

V

uA

nA

V

A
SForward Transconductance

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

ISS

DD

=15V, V

V

C

OSS

C

RSS

b

f = 1.0MH

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

D(ON)

t

t

r

t

D(OFF)

t

f

Q

g

Q

gs

Q

gd

DD

= 15V,

V
I

D

=1A,

GS

= 10V,

V
R

GEN

= 6

VDS = 15V, ID = 15A,

V

GS

=10V

2

GS

Z

ohm

= 0V

1200

530
150

5

65
67

90

34.4

5.1

7.7

F

P
P

F

P

F

ns
ns
ns
ns
nC

nC
nC