SDU/D20N03L
SamHop Microelectronics Corp.
JULY, 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
30V
I
D
20A
R
DS(ON) ( mW )
13 @ V
20.5 @ VGS = 4.5V
G
S
SDU SERIES
TO-252AA(D-PAK)
GS = 10V
D
TYP
G
D
SDD SERIES
TO-251(l-PAK)
S
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Symbol
Drain-Source Voltage
Gate-Source Voltage 20
Drain Current-Continuous @TJ=125 C
-Pulsed
a
Drain-Source Diode Forward Current 20
Maximum Power Dissipation
@Tc=25 C
V
V
I
DS
GS
D
I
DM
S
I
D
P
Limit Unit
Derate above 25 C
Operating and Storage
Temperature Range
J
, T
STG
T
-55 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
R
JC
JA
30
20
77
50
0.3
3
50
V
V
A
A
A
W
W/ C
C
C
/W
C
/W
1
SDU/D20N03L
ELECTRICAL CHARACTERISTICS (T
Parameter
Symbol
C
=25 C unless otherwise noted)
Condition
OFF CHARACTERISTICS
V
GS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
a
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
BV
DSS
DSS
I
I
GSS
V
GS(th)
DS(ON)
R
D(ON)
I
g
FS
b
= 0V, ID = 250uA
V
DS
= 24V, V
V
GS
= +/-20V, V
V
DS
= VGS, ID = 250uA
V
GS
= 10V, ID =16A
GS
= 4.5V, ID = 12A
V
V
DS
= 10V, V
V
DS
= 10V, ID = 20A
GS
= 0V
DS
GS
= 10V
= 0V
DYNAMIC CHARACTERISTICS
Min
Typ
30
1 1.5
13
20.5
60
25
Max
Unit
10
+/-100
3
m ohm
15
m ohm
24
V
uA
nA
V
A
SForward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
V
DD
=15V, V
C
OSS
C
RSS
b
f = 1.0MH
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
D(ON)
t
t
r
t
D(OFF)
t
f
g
Q
Q
gs
Q
gd
V
DD
= 15V,
D
=1A,
I
GS
= 10V,
V
GEN
V
VDS = 15V, ID = 20A,
GS
=10V
V
2
= 6
GS
= 0V
Z
ohm
930
400
120
30
20
34
10
26.5
4.8
5.4
P
F
P
F
P
F
ns
ns
ns
ns
nC
nC
nC