SamHop Microelectronics SDB55N02, SDP55N02 Datasheet
S DP /B 55N02
S amHop Microelectronics C orp.
Augus t , 2002
N-C hannel E nhancement Mode F ield E ffect T ransis tor
4
PR ODUC T S UMMAR Y
VDS S
20V
ID
55A
D
G
S
S DB S E RIE S
TO-2 63(DD-PAK)
R DS (on) ( m
14 @ VGS = 4. 5V
W
) T YP
G
D
S
S DP S E RIE S
TO-2 20
F E ATUR E S
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
ABS OLUTE MAX IMUM R ATING S (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
Drain C urrent-C ontinuous @ TJ =125 C
-P ulsed
a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
@ T c=25 C
Derate above 25 C
Operating and S torage
Temperature R ange
S ymbol
V
DS
V
G S
I
D
I
DM
I
S
P
D
TJ, T
S TG
Limit Unit
20
12
55
165
55
75
0.5
-65 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R es is tance, J unction-to-C a s e
Thermal R es is tance, J unction-to-Ambient
R
R
J C
J A
2
62.5
V
V
A
A
A
W
W / C
C
C
/W
C
/W
1
S DP /B 55N02
E LE C T R IC AL C H AR AC T E R IS T IC S (T C 25 C unles s otherwis e noted)
P arameter
S ymbol
=
C ondition
Min
Typ
C
OF F CHAR ACT E R IS T IC S
Drain-S ource B reakdown Volta ge
Zero G ate Voltage Drain Current
G a te-Body Leakage
ON C HAR AC TE R IS TIC S
a
G a te T hres hold Voltage
Drain-S ource On-S tate R es istance
On-S ta te Drain C urrent
0V, ID 250uA
B V
DS S
I
DS S
I
G S S
V
G S (th)
R
DS (ON)
I
D(ON)
g
F S
b
VDS 16V, V
V
G S
V
DS VG S
V
G S =
V
DS
V
DS =
=
=
G S
= =
=
=
0V
8V, VDS 0V
=
, ID = 250uA
4.5V, ID = 21A
= 10V, V
G S
= 10V
10V, ID = 26A
20
0.9 1.5
55
1
14
53
V
G S
DYNAMIC C HAR AC TE R IS TICS
Max
10
100
19
4
Unit
V
uA
nA
V
m ohm
A
SF orward Transconductance
Input C apacitance
Output C apacitance
R evers e Transfer C apacitance
S WIT C HING C HAR AC T E R IS TIC S
Turn-O n Delay Time
R ise Time
Turn-O ff Delay Time
F all Time
Total G ate Charge
G a te-S ource C harge
G a te-Drain C harge
P
C
IS S
V
DS
=15V, V
C
OS S
C
R S S
b
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
f =1.0MH
VDD = 10V,
ID = 1A,
V
G S
= 10V
R
G E N
= 6
G S
Z
ohm
= 0V
1100
600
180
50 ns
62.5
200
89
18.2
25
F
P
F
P
F
ns
ns
ns
nC
VDS =10V, ID = 30A,
Q
Q
gs
gd
V
G S
=4.5V
2
5.3
2.2
nC
nC
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