ROHM SP8K80 Technical data

Data Sheet

10V Drive Nch MOSFET

SP8K80

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

(8) (5)(7) (6)

1) Built-in G-S protection diode.

2) Small surface mount package(SOP8).

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

(1)

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SP8K80 

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

*4 Mounted on a ceramic board.

=50V, RG=25, Tch=25°C

DD

Symbol Limits Unit

500 V

30 V

*3

0.5 A

*1

*3

*1

*2

*2

*4

2A

0.5 A

2A

0.25 A

0.017 mJ

2W

0.2 C

55 to 150 C

E

DSS

GSS

DP

SP

I

AS

D

S

AS

D

ch

stg

(4)(2) (3)

(8) (7)

∗2

∗1

(1) (2)

1 ESD PROTECTION DIODE
2 BODY DIODE

(6) (5)

∗2

(3) (4)

∗1

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

1/6

2011.10 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SP8K80

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 AVDS=500V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

*

-

*

l 0.1 - - S VDS=10V, ID=0.25A

9.0 11.7

- 23.5 - pF VDS=25V

- 36.5 - pF VGS=0V

- 2.4 - pF f=1MHz

- 10 - ns VDD 250V, ID=0.25A

*

- 18 - ns VGS=10V

*

- 25 - ns RL=1000

*

- 170 - ns RG=10

*

- 3.8 - nC VDD 250V

*

- 1.3 - nC ID=0.5A

*

- 1.6 - nC VGS=10V

*

ID=0.25A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=0.25A, VGS=0V

2/6

2011.10 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SP8K80

Electrical characteristic curves (Ta=25C)

0

0.02

0.04

0.06

0.08

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=4.5V

VGS=5.0V

VGS=10.0V

VGS=6.0V

VGS=7.0V

VGS=8.0V

VGS=6.5V

Ta=25°C
Pulsed

0.0

0.1

0.2

0.3

0.4

0.5

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=5.0V

VGS=6.0V

VGS=4.5V

VGS=7.0V

VGS=8.0V

VGS=6.5V

Ta=25°C
Pulsed

0.001

0.01

0.1

1

2.0 3.0 4.0 5.0 6.0 7.0 8.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

2

3

4

5

6

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

1

10

100

0.01 0.1 1

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

5

10

15

20

25

-50 0 50 100 150

Static Drain-Source On-State Resistance : R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=0.25A

ID=0.50A

3/6

2011.10 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SP8K80

0.001

0.01

0.1

1

0.001 0.01 0.1 1

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.01

0.1

1

0 0.5 1 1.5 2

Source Current : I

S

[A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

2

4

6

8

10

12

14

16

18

20

0 1 2 3 4 5 6 7 8 9 101112 13 14 15 16 17 18 19 20

Static Drain-Source On-State Resistance

R

DS(on)

[W]

Gate-Source Voltage : VGS [V]

FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=0.5A

ID=0.25A

Ta=25°C
Pulsed

1

10

100

1000

10000

0.01 0.1 1

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

V

DD

≒

250V

V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

12

0 1 2 3 4 5

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

T

a

=25°C

V

DD

=250V

I

D

=0.5A

Pulsed

0.1

1

10

100

1000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz
VGS=0V

C

iss Coss

C

rss

4/6

2011.10 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SP8K80

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse:1unit

Mounted on a ceramic board.
(30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=89.3°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

10

100

1000

0.1 1

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.15 Reverse Recovery Time vs. Source Current

T

a

=25°C

di/dt=50A/μs
V

GS

=0V

Pulsed

0.001

0.01

0.1

1

10

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

Ta=25°C
Single Pulse:1unit

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC operation

5/6

2011.10 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SP8K80

F

it

%

V
V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

R

L

V

DD

D

I

R

L

V

DD

Pulse width

V

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

I

AS

V

DD

1

2

L

E

AS

=

I

AS

2

V

(BR)DSS

V

(BR)DSS

- V

V

DD

(BR)DSS

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

R1120A