ROHM SP8K80 Technical data
Data Sheet
10V Drive Nch MOSFET
SP8K80
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
Features
(8) (5)(7) (6)
1) Built-in G-S protection diode.
2) Small surface mount package(SOP8).
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
(1)
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TB
Basic ordering unit (pieces) 2500
SP8K80
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum channel temperature allowed.
*4 Mounted on a ceramic board.
=50V, RG=25, Tch=25°C
DD
Symbol Limits Unit
500 V
30 V
*3
0.5 A
*1
*3
*1
*2
*2
*4
2A
0.5 A
2A
0.25 A
0.017 mJ
2W
0.2 C
55 to 150 C
E
DSS
GSS
DP
SP
I
AS
D
S
AS
D
ch
stg
(4)(2) (3)
(8) (7)
∗2
∗1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(6) (5)
∗2
(3) (4)
∗1
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1/6
2011.10 - Rev.A
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Data Sheet
SP8K80
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=30V, VDS=0V
500 - - V ID=1mA, VGS=0V
- - 100 AVDS=500V, VGS=0V
3.0 - 5.0 V VDS=10V, ID=1mA
*
-
*
l 0.1 - - S VDS=10V, ID=0.25A
9.0 11.7
- 23.5 - pF VDS=25V
- 36.5 - pF VGS=0V
- 2.4 - pF f=1MHz
- 10 - ns VDD 250V, ID=0.25A
*
- 18 - ns VGS=10V
*
- 25 - ns RL=1000
*
- 170 - ns RG=10
*
- 3.8 - nC VDD 250V
*
- 1.3 - nC ID=0.5A
*
- 1.6 - nC VGS=10V
*
ID=0.25A, VGS=10V
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V IS=0.25A, VGS=0V
2/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
SP8K80
Electrical characteristic curves (Ta=25C)
0
0.02
0.04
0.06
0.08
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=4.5V
VGS=5.0V
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=8.0V
VGS=6.5V
Ta=25°C
Pulsed
0.0
0.1
0.2
0.3
0.4
0.5
0 1 2 3 4 5 6 7 8 9 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=5.0V
VGS=6.0V
VGS=4.5V
VGS=7.0V
VGS=8.0V
VGS=6.5V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
2
3
4
5
6
-50 0 50 100 150
Gate Threshold Voltage : V
GS(th)
[V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
I
D
=1mA
pulsed
1
10
100
0.01 0.1 1
Static Drain-Source On-State Resistance
R
DS(on)
[Ω]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
5
10
15
20
25
-50 0 50 100 150
Static Drain-Source On-State Resistance : R
DS(on)
[Ω]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=0.25A
ID=0.50A
3/6
2011.10 - Rev.A
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