Advanced AMS2026
Monolithic DUAL POWER DISTRIBUTION SWITCH
Systems
RoHS compliant
FEATURES
• 110mΩ Typ. (5V Input) High Side MOSFET Switch • 100µA Maximum On-State Supply Current
• Short Circuit Protection • Available Active-High or Active-Low Enable
• Overcurrent Protection • Available in Space Saving 8 lead SOIC and 8 lead PDIP
• Thermal Protection
• Enable Input Compatible With 3V and 5V Logic
• Controlled Rise and Fall Times Limit Current • USB Power Management
Surges and Minimize EMI
• Undervoltage Lock-Out Guarantees the Switch is • Battery-Charger Circuits
Off At Start-up
PRODUCT DESCRIPTION
The AMS2026 is a dual power distribution switch intended for applications where heavy capacitive loads and short-circuits are
likely to be encountered. The high-side switch is a 110mΩ N-channel MOSFET. The switch is controlled by a logic enable
input compatible with 3V and 5V logic and is available in active-high or active-low enable. The internal charge pump,
designed to control the power switch rise and fall time to minimize current surges during switching, also provides the gate
drive. Requiring no external components the charge pump allows operation from supplies as low as 3.3V. When an overload
or a short circuit is encountered the AMS2026 limits the output current to a safe level by switching into a constant-current
mode and the overcurrent logic output error flag is set to a low. Continuous heavy overloads and short circuits will increase the
power dissipation in the switch; this will cause the junctio n temperature to rise. The thermal protection circuit shuts the pow er
switch off to prevent damage. Once the device has cooled sufficiently, it will turn on automatic. An under voltage lock-out is
provided to insure that the power switch is in the Off state at start-up.
The AMS2026 is offered in the 8 lead SOIC package and the 8 lead PDIP package.
ORDERING INFORMATION PIN CONNECTIONS
PACKAGE TYPE OPER. TEMP
8 LEAD SOIC 8 LEAD PDIP
AMS2026S AMS2026P
RANGE
-40°C to 85°C
APPLICATIONS
• Hot Plug-In Power Supplies
8 LEAD SOIC/ 8 LEAD PDIP
1
ENABLE
2
ERROR
3
ERROR
4
ENABLE
Top View
8
OUTPUT
7
INPUT
6
GROUND
5
OUTPUT
Advanced Monolithic Systems, Inc.
AMS2026
ABSOLUTE MAXIMUM RATINGS (Note 1)
Input Voltage Range, VI -0.3V to 7V Internal Power Dissipation (Note 3)
Output Voltage Range, V
-0.3V to V
O
+0.3V
Input Voltage Range, V
Continuos Output Current, I
at /EN -0.3V to 7V Storage Temperature
I
Internally Limited Lead Temperature (Soldering 25 sec)
O
ELECTRICAL CHARACTERISTICS
Electrical Characteristics for each section at TJ=25°C, V
PARAMETER
Switch On-State Resistance V
V
V
V
Switch Output Leakage Current /EN = VI 0.01 5
Switch Output Rise Time
Switch Output Fall Time
Enable High-Level Input
Voltage
Enable Low-Level Input Voltage
CONDITIONS
(Note 2)
= 5.5V 110 140
I(IN)
= 5.0V 110 140
I(IN)
= 4.5V 110 140
I(IN)
= 4.0V 110 140
I(IN)
, -40°C ≤ TJ ≤ 85°C
/EN = V
I
= 5.5V, CL = 1µF
V
I(IN)
= 2.7V, CL = 1µF
V
I(IN)
= 5.5V, CL = 1µF
V
I(IN)
= 2.7V, CL = 1µF
V
I(IN)
4.0V ≤ V
4.0V ≤ V
≤ 5.5V
I
≤ 5.5V
I
Maximum Junction Temperature
I(IN)
-65°C to +150°C
= 5.5V, IO =rated current, /EN = 0V unless otherwise specified.
I(IN)
Min.
10
4.0 ms
3.8 ms
3.9 ms
3.5 ms
2.4 V
0.6 V
AMS2026
Typ.
Max.
+125°C
265°C
Units
mΩ
mΩ
mΩ
mΩ
µA
µA
Enable Input Current /EN = 0V or /EN = VI -1 1
Enable Delay Time, Low-toHigh Output
Short Circuit Current V
Supply Current, Low-Level
Output
Supply Current, High-Level
Output
Undervoltage lock-out LowLevel Input Voltage
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. For guaranteed performance limits and associated test
conditions, see the Electrical Characteristics tables.
Note 2: To ensure constant junction temperature, low duty cycle pulse testing is used; thermal effects must be taken in consideration separately.
Note 3: The Power Dissipation for the SO-8 package is 725mW at T
= 70 °C P
= 464mW ; for TA = 125 °C PD = 145mW)
D
C
= 1µF
L
C
= 1µF
L
= 5.5V, TJ=25°C
I(IN)
OUT Connected to GND, device enable into
short circuit
/EN = VI , TJ=25°C
/EN = V
, -40°C ≤ TJ ≤ 85°C
I
/EN = 0V, TJ=25°C
/EN = 0V, -40°C ≤ T
2.0 3.0 3.2 V
≤ 85°C
J
= 25 °C. Above TA = 25 °C the Power Dissipation must be derated at 5.8mW/ °C (for TA
A
20
40
0.66 1.2 1.8 A
0.015 10
10
73 100
100
µA
ms
ms
µA
µA
µA
µA
RECOMMENDED OPERATING CONDITIONS:
Min Max
Input Voltage, VI 4.0V 5.5V
Input Voltage, VI at /EN 0V 5.5V
Continuous Output Current, IO 0A 0.6A
Operating Junction Temp. Range -40°C +125°C
Advanced Monolithic Systems, Inc.