Datasheet ZDX130N50 Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

ZDX130N50

 Structure  Dimensions (Unit : mm)

TO -220F M

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Gate-source voltage V

guaranteed to be ±30V .

GSS

4) High package power.

 Application

Switching

TO -220F M

10.0

15.0

12.0

8.02.5

14.0

1.2

1.3

0.8

2.54 2.62.54

(2)(3)(1)

φ

3.2

4.5

φ

3.2

4.5

2.8

0.75

 Packaging specifications  Inner circuit

Package Bulk

Type

Code Basic ordering unit (pieces) 500

ZDX130N50 

(1) Gate (2) Drain (3) Source 1 Body Diode

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Symbol Limits Unit

*1

*3

*2

500 V

30 V

13 A

39 A

13 A

39 A

10 A

50 mJ

40 W

E

DSS

GSS

DP

SP

I

AS

D

S

AS

D

Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Tc=25°C

*3 L 1mH, V

=50V, RG=25 Starting Tch=25°C

DD

∗1

(1) (2) (3)

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth (ch-c) 3.125 C / W

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2011.08- Rev.A

Data Sheet

ZDX130N50

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V Static drain-source on-state resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 AVDS=500V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

- 0.4

*

l 2.0 8.5 - S VDS=10V, ID=6.0A

0.52

- 2180 - pF VDS=25V

- 200 - pF VGS=0V

- 60 - pF f=1MHz

- 30 - ns VDD 250V, ID=5.0A

*

- 25 - ns VGS=10V

*

- 43 - ns RL=50, RG=10

*

-15-ns

*

-40-nC

*

- 11.5 - nC VGS=10V

*

- 12.5 - nC

*

ID=6.5A, VGS=10V



250V, ID=5.0A

V

DD

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.7 V Is=13A, VGS=0V

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2011.08 - Rev.A

Data Sheet

ZDX130N50

Electrical characteristic curves (Ta=25C)

0

1

2

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.0V

VGS=10.0V

VGS=6.0V

VGS=8.0V

Ta=25°C pulsed

0

5

10

15

20

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics(Ⅱ)

VGS=10.0V

VGS=6.0V

VGS=8.0V

VGS=5.0V

Ta=25°C pulsed

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Yfs [S]

Drain Current : ID [A]

Fig.4 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.5 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.6 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.1

1

10

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS

(on) [mW]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

3/5

2011.08 - Rev.A

Data Sheet

ZDX130N50

0

0.2

0.4

0.6

0.8

1

1.2

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS

(on) [W]

Gate-Source Voltage : VGS [V]

Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=13.0A

ID=6.5A

Ta=25°C pulsed

1

10

100

1000

0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.8 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒250V V

GS

=10V

R

G

=10W

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 10 20 30 40 50

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.9 Dynamic Input Characteristics

Ta=25°C VDD=250V I

D

=5.0A

Pulsed

1

10

100

1000

10000

100000

0.01 0.1 1 10 100 1000 10000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.10 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.11 Maximum Safe Operating Area

Tc=25°

C

Single Pulse

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

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2011.08 - Rev.A

Data Sheet

ZDX130N50

F

it

%

V V

V

F

S

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D

I

V

R

L

V

DD

D

R

L

V

DD

Pulse width

DS

50%

10%

GS DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

V

GS

R

G

D.U.T.

I

AS

V

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

DS

I

AS

V

DD

1

2

L

E

AS

=

I

AS

2

V

(BR)DSS

V

(BR)DSS

- V

V

DD

(BR)DSS

Fig.3-2 Avalanche Waveform

5/5

2011.08 - Rev.A

Notes

Notice

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