ROHM ZDX130N50 Technical data

Data Sheet

10V Drive Nch MOSFET

ZDX130N50

 Structure  Dimensions (Unit : mm)

TO -220F M

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Gate-source voltage
V

guaranteed to be ±30V .

GSS

4) High package power.

 Application

Switching

TO -220F M

10.0

10.0

15.0

15.0

12.0

12.0

8.02.5

8.02.5

14.0

14.0

1.2

1.2

1.3

1.3

0.8

0.8

2.54 2.62.54

2.54 2.62.54

(2)(3)(1)

(2)(3)(1)

φ

3.2

4.5

φ

3.2

4.5

2.8

2.8

0.75

0.75

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

ZDX130N50 

(1) Gate
(2) Drain
(3) Source 1 Body Diode

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Symbol Limits Unit

*1

*1

*3

*3

*2

500 V

30 V

13 A

39 A

13 A

39 A

10 A

50 mJ

40 W

E

DSS

GSS

DP

SP

I

AS

D

S

AS

D

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Tc=25°C

*3 L 1mH, V

=50V, RG=25 Starting Tch=25°C

DD

∗1

(1) (2) (3)

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth (ch-c) 3.125 C / W

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1/5

2011.08- Rev.A

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Data Sheet

ZDX130N50

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 AVDS=500V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

- 0.4

*

*

l 2.0 8.5 - S VDS=10V, ID=6.0A

0.52

- 2180 - pF VDS=25V

- 200 - pF VGS=0V

- 60 - pF f=1MHz

- 30 - ns VDD 250V, ID=5.0A

*

- 25 - ns VGS=10V

*

- 43 - ns RL=50, RG=10

*

-15-ns

*

-40-nC

*

- 11.5 - nC VGS=10V

*

- 12.5 - nC

*

ID=6.5A, VGS=10V



250V, ID=5.0A

V

DD

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.7 V Is=13A, VGS=0V

2/5

2011.08 - Rev.A