Data Sheet
10V Drive Nch MOSFET
ZDS020N60
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
Features
(8) (5)
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
(1)
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TB
Basic ordering unit (pieces) 2500
ZDS020N60
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Symbol Limits Unit
0.63 A
*1
*1
*2
600 V
30 V
2.5 A
0.63 A
2.5 A
2W
DSS
GSS
D
DP
S
SP
D
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
(4)
(8) (7) (6) (5)
∗1
(1) (2) (3) (4)
1 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient Rth (ch-a) 62.5 C / W
*Mounted on a ceramic board.
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Symbol Limits Unit
*
1/5
2011.08 - Rev.A
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Data Sheet
ZDS020N60
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
2.0 - 4.0 V VDS=10V, ID=1mA
-
*
*
l 0.05 0.5 - S ID=0.5A, VDS=10V
4.4 5.0
- 310 - pF VDS=10V
- 145 - pF VGS=0V
- 40 - pF f=1MHz
- 25 - ns ID=600mA, VDD 200V
*
- 20 - ns VGS=10V
*
- 65 - ns RL=333
*
- 65 - ns RG=50
*
-1220nCI
*
-3-nCV
*
-5-nC
*
ID=0.5A, VGS=10V
=600mA, VDD 450V
D
=10V
GS
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V Is=1A, VGS=0V
2/5
2011.08 - Rev.A
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Data Sheet
ZDS020N60
Electrical characteristic curves (Ta=25C)
0
0.1
0.2
0.3
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=5.0V
T
a
=25
°C
pulsed
VGS=10.0V
VGS=6.0V
VGS=8.0V
VGS=4.0V
0
0.5
1
1.5
2
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=6.0V
VGS=8.0V
VGS=4.0V
VGS=5.0V
Ta=25°C
pulsed
0.1
1
10
100
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[W]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
10
0.01 0.1 1 10
Forward Transfer Admittance
Y
fs
[S]
Drain Current : ID [A]
Fig.4 Forward Transfer Admittance vs. Drain Current
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.001
0.01
0.1
1
10
0.0 2.0 4.0 6.0 8.0
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.5 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0
Source Current : I
s
[A]
Source-Drain Voltage : VSD [V]
Fig.6 Source Current vs. Source-Drain Voltage
VGS=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/5
2011.08 - Rev.A
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Data Sheet
ZDS020N60
0
2
4
6
8
10
0 2 4 6 8 10
Static Drain-Source On-State Resistance
R
DS(on)
[W]
Gate-Source Voltage : VGS [V]
Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
ID=0.5A
ID=0.3A
Ta=25°C
pulsed
10
100
1000
10000
0.01 0.1 1 10
Switching Time : t [ns]
Drain Current : ID [A]
Fig.8 Switching Characteristics
t
d(on)
t
r
t
d(off) tf
V
DD
≒200V
V
GS
=10V
R
L
=333W
T
a
=25°C
Pulsed
0
2
4
6
8
10
0 2 4 6 8 10 12
Gate-Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.9 Dynamic Input Characteristics
T
a
=25°C
V
DD
=450V
I
D
=0.6A
Pulsed
1
10
100
1000
10000
0.01 0.1 1 10 100 1000 10000
Capacitance : C [pF]
Drain-Source Voltage : VDS [V]
Fig.10 Typical Capacitance vs. Drain-Source Voltage
T
a
=25°C
f=1MHz
VGS=0V
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
10
0.1 1 10 100 1000
Drain Current : I
D
[ A ]
Drain-Source Voltage : VDS [ V ]
Fig.11 Maximum Safe Operating Area
T
a
=25°C
Single Pulse
Mounted on a recommended land.
(20mm × 20mm × 0.8mm)
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
Operation in this area is limited by R
DS(on)
(VGS = 10V)
4/5
2011.08 - Rev.A
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Data Sheet
ZDS020N60
F
it
%
V
V
V
F
S
Measurement circuits
V
GS
D.U.T.
R
G
Pulse width
D
I
V
DS
R
L
V
DD
50%
10%
GS
DS
10% 10%
t
d(on)
t
on
90%
50%
90% 90
t
d(off)
t
r
t
off
t
f
ig.1-1 Switching Time Measurement Circu
V
I
G(Const.)
GS
R
G
D.U.T.
D
I
V
R
L
V
DD
D
Fig.1-2 Switching Waveforms
V
G
Q
g
GS
QgsQ
gd
Charge
ig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
5/5
2011.08 - Rev.A
Notes
Notice
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