ROHM ZDS020N60 Technical data
Data Sheet
10V Drive Nch MOSFET
ZDS020N60
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
Features
(8) (5)
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
(1)
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TB
Basic ordering unit (pieces) 2500
ZDS020N60
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Symbol Limits Unit
0.63 A
*1
*1
*2
600 V
30 V
2.5 A
0.63 A
2.5 A
2W
DSS
GSS
D
DP
S
SP
D
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
(4)
(8) (7) (6) (5)
∗1
(1) (2) (3) (4)
1 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient Rth (ch-a) 62.5 C / W
*Mounted on a ceramic board.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Symbol Limits Unit
*
1/5
2011.08 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDS020N60
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
2.0 - 4.0 V VDS=10V, ID=1mA
-
*
*
l 0.05 0.5 - S ID=0.5A, VDS=10V
4.4 5.0
- 310 - pF VDS=10V
- 145 - pF VGS=0V
- 40 - pF f=1MHz
- 25 - ns ID=600mA, VDD 200V
*
- 20 - ns VGS=10V
*
- 65 - ns RL=333
*
- 65 - ns RG=50
*
-1220nCI
*
-3-nCV
*
-5-nC
*
ID=0.5A, VGS=10V
=600mA, VDD 450V
D
=10V
GS
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V Is=1A, VGS=0V
2/5
2011.08 - Rev.A
Loading...