ROHM VT6T11 Technical data
Power management (dual transistors)
VT6T11
zStructure zDimensions (Unit : mm)
PNP silicon epitaxial planar transistor
zFeatures
1) Very small package with two transistors.
2) Suitable for current mirror circuits.
zApplications
Current mirror circuits
zPackaging specifications zInternal circuit
Type
VT6T11
Package
Code
Basic ordering
unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total
Power dissipation
Element
Symbol
V
VCEO
VEBO −5
ICP
P
Junction temperature
Storage temperature
∗1
Pw=1mS Single pulse
∗2
Each terminal mounted on a recommended land
T
CBO −20 V
I
C
D
T
stg
Limits
−20 V
∗1
−400
150
∗2
120
j 150
−55 to +150 °C
Unit
V
mA −200
mA
mW
mW
°C
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
DC current gain ratio
Transition frequency
Output capacitance
CEO
BV
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
h
FE
(Tr1) /
h
f
T
Cob
FE
(Tr2)
−20
−20
−5
−
−
−
120
0.9
−
−
−
−
−
−
−
−0.12
−
−
350
3
VMT6
Each lead has same dimensions.
(6) (5) (4)
(1) (3)(2)
−
−
−
−0.1
−0.1
−0.30
560
1.1
MHz
−
−
V
V
V
µA
µA
V
−
−
pF
1.2 ± 0.1
0.14
(6) (4)(5)
0.1
0.1
±
±
1.2
0.92
(1) (3)(2)
Tr1
0.14
C
I
C
I
E
I
V
V
C
I
V
V
V
V
0.4
0.4
0.8 ± 0.1
Abbreviated symbol : T11
Tr2
= −1mA
= −50µA
= −50µA
CB
= −20V
EB
= −5V
= −100mA, IB= −10mA
CE
= −2V, IC= −1mA
CE
= −2V, IC= −1mA
CE
= −10V, IE=10mA, f=100MHz
CB
= −10V, IE=0A, f=1MHz
0.16
±
(1) Base
(2) Emitter
(3) Emitter
(4) Collector
(5) Collector
(5) Base
(6) Collector
(6) Base
0.1
±
0.5 ± 0.1
0.2
0 ~ 0.05
0.05
0.13
0.1
±
0.05
±
0.2
UNIT : mm
(Tr1)
(Tr1)
(Tr2)
(Tr2)
(Tr1)
(Tr2)
(Tr1)
(Tr2)
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Data Sheet VT6T11
zElectrical characteristics curves
B=1.0mA
I
I
-1000
C (mA)
-100
-10
VCE =2V
Ta=125°C
25°C
-55°C
-100
-1
-0.1
COLLECTOR CURRENT : I
-0.01
COLLECTOR CURRENT : IC (mA)
0 -0.2 -0.4 -0.6 -0.8 -1
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :
-1
Ta=25
°C
IC/I
B = 20/1
IC/I
CE(sat) (V)
B =10/1
-0.1
VOLTAGE : V
COLLECTOR SATURATION
-0.01
CE(sat) (V)
-0.1
VOLTAGE : V
COLLECTOR SATURATION
-0.01
-1 -10 -100 -1000
COLLECTOR CURRENT : IC (mA)
B=0.9mA
-80
-60
-40
-20
0
0 -1-2-3-4-5
-1
IC/IB= 10/1
Ta=125°C
25°C
-55°C
-1 -10 -100 -1000
COLLECTOR CURRENT : I
I
B=0.8mA
CE (V)
V
Ta=25
C (mA)
°C
B=0.7mA
I
I
B=0.6mA
I
B=0.5mA
I
B=0.4mA
I
B=0.3mA
IB=0.2mA
I
B=0.1mA
I
B=0mA
1000
FE
Ta=125°C
DC CURENT GAIN : h
10
25°C
-55°C
-0.1 -1 -10 -100 -1000
COLLECTOR CURRENT : I
1000
VCE = 10V
Ta=25
(MHz)
T
°C
100
10
TRANSITION FREQUENCY :f
-0.1 -1 -10 -100 -1000
EMITTER CURRENT : I
VCE=2V
C (mA)
E (mA)
100
10
Cob
Cib (pF)
Cob (pF)
1
Ta=25
°C
f=1MHz
I
E=0
I
C=0
0.1
-0.01 -0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Cib
CB (V)
EB(V)
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
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