ROHM VT6M1 Technical data

Data Sheet

1.2V Drive Nch + Pch MOSFET

VT6M1

 Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Small package(VMT6).

3) Low voltage drive(1.2V drive).

 Application

Switching

VMT6

1.2 0.5

0.14

(6) (5) (4)

1.2

0.92

(1) (2) (3)

0.4

0.4

0.14

±

0.1

0.8

Abbreviated symbol : M01

0.130.16

 Packaging specifications

Inner circuit

Package Taping

Type

Code T2CR
Basic ordering unit (pieces) 8000

VT6M1 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

Limits

20 20 V

8 10 V

100 100 mA

400 400 mA

0.15

0.12

150

55 to 150

Unit

W / TOTAL

W / ELEMENT

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

(6) (5)

∗2 ∗2

∗1

(1) (2)

1 ESD PROTECTION DIODE
2 BODY DIODE

(4)

∗1

(3)

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Data Sheet

VT6M1

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

d(on)

d(off)

fs

iss

oss

rss

r

f

ConditionsParameter

--10 AVGS=±8V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=100A

- 2.5 3.5 I

- 3.0 4.2 I

*

- 3.8 5.3 I

- 4.5 9.0 I

- 6.0 18.0 I

*

l 180 - - mS VDS=10V, ID=100mA

=100mA, VGS=4.5V

D

=100mA, VGS=2.5V

D



=50mA, VGS=1.8V

D

=20mA, VGS=1.5V

D

=10mA, VGS=1.2V

D

- 7.1 - pF VDS=10V

- 3.3 - pF VGS=0V

- 1.7 - pF f=1MHz

-5-nsV

*

-4-nsV

*

- 20 - ns RL=200RG=10

*

-38-ns

*

10V, ID=50mA

DD

=4.5V

GS

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=100mA, VGS=0V

2/8

2011.09 - Rev.A

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Data Sheet

VT6M1

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

--10 AVGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

- 1 AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=100A

- 2.5 3.8 I

- 3.4 5.1 I

*

- 4.8 8.2 I

- 6.0 13.2 I

- 13.3 53.2 I

*

l 120 - - mS VDS=10V, ID=100mA

=100mA, VGS=4.5V

D

=50mA, VGS=2.5V

D



=20mA, VGS=1.8V

D

=10mA, VGS=1.5V

D

=1mA, VGS=1.2V

D

- 15.0 - pF VDS=10V

- 4.0 - pF VGS=0V

- 1.5 - pF f=1MHz

- 46 - ns VDD 10V, ID=50mA

*

*

- 62 - ns VGS=4.5V

*

*

- 325 - ns RL=200RG=10

*

*

- 137 - ns

*

*

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

--1.2 V Is=100mA, VGS=0V

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2011.09 - Rev.A