ROHM VT6K1 Technical data

Data Sheet

1.2V Drive Nch + Nch MOSFET

VT6K1

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Small package(VMT6).

3) Low voltage drive(1.2V drive).

 Application

Switching

VMT6

1.2 0.5

0.14

(6) (5) (4)

1.2

0.92

(1) (2) (3)

0.4

0.4

0.14

±

0.1

0.8

Abbreviated symbol : K01

0.130.16

 Packaging specifications

Package Taping

Type

Code T2CR
Basic ordering unit (pieces) 8000

VT6K1 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

*2

D

20 V

8V

100 mA

400 mA

0.15 W / TOTAL

0.12 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

(6) (5)

∗2 ∗2

∗1

(1) (2)

1 ESD PROTECTION DIODE
2 BODY DIODE

(4)

∗1

(3)

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1/5

2011.08 - Rev.A

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Data Sheet

VT6K1

 Electrical characteristics (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

Conditions

--10 AVGS=8V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=100A

- 2.5 3.5 I

- 3.0 4.2 I

*

- 3.8 5.3 I

- 4.5 9.0 I

- 6.0 18.0 I

*

l 180 - - mS VDS=10V, ID=100mA

=100mA, VGS=4.5V

D

=100mA, VGS=2.5V

D



=50mA, VGS=1.8V

D

=20mA, VGS=1.5V

D

=10mA, VGS=1.2V

D

- 7.1 - pF VDS=10V

- 3.3 - pF VGS=0V

- 1.7 - pF f=1MHz

-5-nsV

*

*

-4-nsV

*

*

- 20 - ns RL=200

*

*

- 38 - ns RG=10

*

*

10V, ID=50mA

DD

=4.5V

GS

Body diode characteristics (Source-Drain)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.2 V Is=100mA, VGS=0V

2/5

2011.08 - Rev.A

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Data Sheet

VT6K1

Electrical characteristic curves

100

1000

10000

100000

0.0001 0.001 0.01 0.1 1

VGS= 1.5V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0

0.02

0.04

0.06

0.08

0.1

0 0.2 0.4 0.6 0.8 1

VGS= 1.2V

VGS= 4.5V
VGS= 4.0V
VGS= 2.5V
VGS= 1.8V
VGS= 1.5V

Ta=25°C
Pulsed

0.0001

0.001

0.01

0.1

1

0 0.5 1 1.5 2

VDS= 10V
Pulsed

T

a

= 125°C

T

a

= 75°C

T

a

= 25°C

T

a

= - 25

°C

100

1000

10000

100000

0.0001 0.001 0.01 0.1 1

VGS= 1.2V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V

.

Ta=25°C
Pulsed

0

0.02

0.04

0.06

0.08

0.1

0 2 4 6 8 10

VGS= 1.2V

VGS= 4.5V
VGS= 4.0V
VGS= 2.5V
VGS= 1.8V
VGS= 1.5V

Ta=25°C
Pulsed

100

1000

10000

100000

0.0001 0.001 0.01 0.1 1

VGS= 2.5V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

100

1000

10000

100000

0.0001 0.001 0.01 0.1 1

VGS= 4.5V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

100

1000

10000

100000

0.0001 0.001 0.01 0.1 1

VGS= 1.8V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)

Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[m

Ω

]

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

DRAIN CURRENT : I

D

[A]

DRAIN CURRENT : I

D

[A]

Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

100

1000

10000

100000

0.0001 0.001 0.01 0.1 1

VGS= 1.2V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

3/5

2011.08 - Rev.A

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Data Sheet

VT6K1

0

2000

4000

6000

8000

10000

0 2 4 6 8

Ta=25℃
Pulsed

ID= 0.1A

ID= 0.01A

0.01

0.1

1

0 0.5 1 1.5

VGS=0V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

1

10

100

0.01 0.1 1 10 100

C

iss

C

oss

C

rss

Ta=25°C
f=1MHz

VGS=0V

1

10

100

1000

0.01 0.1 1

t

f

t

d(on)

t

d(off)

Ta=25°C
VDD=10V

VGS=4.5V
RG=10Ω
Pulsed

t

r

Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage

Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

Fig.14 Typical Capacitance
vs. Drain-Source Voltage

Fig.13 Switching Characteristics

SOURCE CURRENT : I

s

[A]

SOURCE-DRAIN VOLTAGE : VSD [V]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

ON

)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

0.01 0.1 1

VDS= 10V
Pulsed

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

Fig.10 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

4/5

2011.08 - Rev.A

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Data Sheet

VT6K1

F

it

%

V
V

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

D.U.T.

D

I

R

L

V

DD

V

DS

GS
DS

t

Fig.1-2 Switching Waveforms

Pulse width

50%

10%

10% 10%

d(on)

90% 90

t

r

t

on

90%

t

d(off)

t

off

50%

t

f

 Notice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

5/5

2011.08 - Rev.A

Notes

Notice

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