ROHM VT6J1 Technical data

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©2012 ROHM Co., Ltd. All rights reserved.

1.2V Drive Pch + Pch MOSFET

VT6J1

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Small package(VMT6).

3) Low voltage drive(1.2V drive).

Application

Switching

VMT6

1.2 0.5

0.14

(6) (5) (4)

1.2

0.92

(1) (2) (3)

0.4

0.4

0.14

±

0.1

0.8

Abbreviated symbol : J01

0.130.16

Packaging specifications

Package Taping

Type

Code T2CR
Basic ordering unit (pieces) 8000

VT6J1 

Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

*2

D

20 V

10 V

100 mA

400 mA

0.15 W/TOTAL

0.12 W/ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a reference land.

Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

(6) (5)

∗2 ∗2

∗1

(1) (2)

*1 ESD PROTECTION DIODE
*2 BODY DIODE

(4)

∗1

(3)

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2012.04 - Rev.B

VT6J1

Electrical char act er i st i cs ( Ta = 25C)

<It is the sam e ratings for Tr1 and Tr2.>

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain- sour ce on-stat e
resistance

Forward transfer adm ittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay tim e t
Rise time t
Turn-off delay time t
Fall time t

*Pulsed

Symbol Min. Typ. Max. Unit

R

Conditions

GSS

(BR)DSS

DSS

GS (th)

DS (on)

l 120 - - mS VDS=10V, ID=100mA

fs

iss

oss

rss

d(on)

r

d(off)

f

--10 AVGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1 AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=100A

-2.53.8 I

-3.45.1 I

*

-4.88.2 I

- 6.0 13.2 I

- 10.0 40.0 I

=100mA, VGS=4.5V

D

=50mA, VGS=2.5V

D



=20mA, VGS=1.8V

D

=10mA, VGS=1.5V

D

=1mA, VGS=1.2V

D

*

- 15.0 - pF VDS=10V

-4.0-pFV

GS

=0V

-1.5-pFf=1MHz

-46-nsV

*

*

*

*

-62-nsV

*

*

*

*

- 325 - ns RL=200

*

*

*

*

- 137 - ns RG=10

*

*

*

*

10V, ID=50mA

DD

=4.5V

GS

DataSheet

Body diode characteristi cs (Source-Drain)

<It is the sam e ratings for Tr1 and Tr2.>

Symbol Min. Typ. Max. Unit

Forward Voltage V

*Pulsed

SD

*

ConditionsParameter

--1.2 V Is=100mA, VGS=0V

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© 2012 ROHM Co., Ltd. All rights reserved.

2/5

2012.04 - Rev.B