ROHM VT6J1 Technical data

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1.2V Drive Pch + Pch MOSFET

VT6J1

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Small package(VMT6).

3) Low voltage drive(1.2V drive).

Application

Switching

VMT6

1.2 0.5

0.14

(6) (5) (4)

1.2

0.92

(1) (2) (3)

0.4

0.4

0.14

±

0.1

0.8

Abbreviated symbol : J01

0.130.16

Packaging specifications

Package Taping

Type

Code T2CR
Basic ordering unit (pieces) 8000

VT6J1 

Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

*2

D

20 V

10 V

100 mA

400 mA

0.15 W/TOTAL

0.12 W/ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a reference land.

Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

(6) (5)

∗2 ∗2

∗1

(1) (2)

*1 ESD PROTECTION DIODE
*2 BODY DIODE

(4)

∗1

(3)

1/5

2012.04 - Rev.B

VT6J1

Electrical char act er i st i cs ( Ta = 25C)

<It is the sam e ratings for Tr1 and Tr2.>

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain- sour ce on-stat e
resistance

Forward transfer adm ittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay tim e t
Rise time t
Turn-off delay time t
Fall time t

*Pulsed

Symbol Min. Typ. Max. Unit

R

Conditions

GSS

(BR)DSS

DSS

GS (th)

DS (on)

l 120 - - mS VDS=10V, ID=100mA

fs

iss

oss

rss

d(on)

r

d(off)

f

--10 AVGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1 AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=100A

-2.53.8 I

-3.45.1 I

*

-4.88.2 I

- 6.0 13.2 I

- 10.0 40.0 I

=100mA, VGS=4.5V

D

=50mA, VGS=2.5V

D



=20mA, VGS=1.8V

D

=10mA, VGS=1.5V

D

=1mA, VGS=1.2V

D

*

- 15.0 - pF VDS=10V

-4.0-pFV

GS

=0V

-1.5-pFf=1MHz

-46-nsV

*

*

*

*

-62-nsV

*

*

*

*

- 325 - ns RL=200

*

*

*

*

- 137 - ns RG=10

*

*

*

*

10V, ID=50mA

DD

=4.5V

GS

DataSheet

Body diode characteristi cs (Source-Drain)

<It is the sam e ratings for Tr1 and Tr2.>

Symbol Min. Typ. Max. Unit

Forward Voltage V

*Pulsed

SD

*

ConditionsParameter

--1.2 V Is=100mA, VGS=0V

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2/5

2012.04 - Rev.B

VT6J1

Electrical characteristic curves

DataSheet

0.1

0.08

[A]

D

0.06

0.04

DRAIN CURRENT : −I

0.02

0

VGS= −1.5V

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : −VDS[V]

Fig.1 Typical output characteristics(Ⅰ)

100000

Ta=25°C
Pulsed

)[mΩ]

10000

ON

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.0001 0.001 0.01 0.1 1

DRAIN-CURRENT : −I

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Ta=25°C
Pulsed

VGS= −4.5V
VGS= −4.0V
VGS= −2.5V
VGS= −2.0V
VGS= −1.8V

VGS= −1.2V

VGS= −1.2V
VGS= −1.5V
VGS= −1.8V
VGS= −2.5V
VGS= −4.5V

[A]

D

0.1

0.08

[A]

D

0.06

0.04

0.02

DRAIN CURRENT : −I

0

0246810

VGS= −4.5V
VGS= −4.0V
VGS= −2.5V
VGS= −2.0V
VGS= −1.8V

VGS= −1.2V

DRAIN-SOURCE VOLTAGE : −VDS[V]

Fig.2 Typical output characteristics(Ⅱ)

100000

VGS= −4.5V

)[mΩ]

10000

ON

(

DS

Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.0001 0.001 0.01 0.1 1

DRAIN-CURRENT : −ID[A]

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

VGS= −1.5V

Ta=25°C
Pulsed

1

VDS= −10V
Pulsed

0.1

[A]

Ta= 125°C

D

0.01

Ta= 75°C
Ta= 25°C

Ta= -25°C

0.001

DRAIN CURRENT : −I

0.0001
0 0.5 1 1.5 2

GATE-SOURCE VOLTAGE : −VGS[V]

Fig.3 Typical Transfer Characteristics

100000

VGS= −2.5V
Pulsed

)[mΩ]

ON

10000

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.0001 0.001 0.01 0.1 1

DRAIN-CURRENT : −ID[A]

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

100000

VGS= −1.8V
Pulsed

)[mΩ]

ON

(

10000

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.0001 0.001 0.01 0.1 1

DRAIN-CURRENT : −ID[A]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

Ta= 125°C

= 75°C

T

a

Ta= 25°C
T

= -25°C

a

100000

VGS= −1.5V
Pulsed

)[mΩ]

ON

10000

(

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.0001 0.001 0.01 0.1 1

DRAIN-CURRENT : −ID[A]

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅴ)

Ta= 125°C

= 75°C

T

a

T

= 25°C

a

Ta= -25°C

100000

VGS= −1.2V
Pulsed

)[mΩ]

10000

ON

(

DS

1000

Ta= 125°C

= 75°C

T

a

T

= 25°C

a

Ta= -25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.0001 0.001 0.01 0.1 1

DRAIN-CURRENT : −ID[A]

Fig.9 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅵ)

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3/5

2012.04 - Rev.B

VT6J1

DataSheet

1

VDS= −10V
Pulsed

0.1

0.01

0.01 0.1 1

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : −ID[A]

Fig.10 Forward Transfer Admittance

vs. Drain Current

1000

100

t

f

SWITCHING TIME : t [ns]

t

r

10

0.01 0.1 1

DRAIN-CURRENT : −ID[A]

Fig.13 Switching Characteristics

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

t

d(off)

t

d(on)

Ta=25°C
VDD= −10V
VGS=−4.5V
RG=10Ω
Pulsed

1

VGS=0V
Pulsed

[A]

S

0.1

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

REVERSE DRAIN CURRENT : −I

0.01
0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : −VSD[V]

Fig.11 Reverse Drain Current

vs. Sourse-Drain Voltage

100

C

10

C

1

CAPACITANCE : C [pF]

0

oss

C

rss

Ta=25°C
f=1MHz

VGS=0V

0.01 0.1 1 10 100

GATE-SOURCE VOLTAGE : −VDS[V]

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

10000

8000

)[mΩ]

ON

(

6000

DS

4000

2000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0246810

GATE-SOURCE VOLTAGE : −VGS[V]

Fig.12 Static Drain-Source On-State

iss

ID= −0.001A

ID= −0.1A

Resistance vs. Gate Source Voltage

Ta=25°C
Pulsed

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4/5

2012.04 - Rev.B

VT6J1

Measurement circuit s

DataSheet

D

I

VGS

D.U.T.

RG

Fig.1-1 Switching Time Measurement Circuit

VDS

RL

VDD

Pulse width

GS

V

10%

50%

DS

V

90% 90%

t

d(on)

t

on

90%

10% 10%

t

d(off)

t

r

Fig.1-2 Switching Waveforms

t

off

50%

t

f

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5/5

2012.04 - Rev.B

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