ROHM US6X8 Technical data

US6X8

Transistors

General purpose amplification (30V, 1A)

US6X8

zApplication

Low frequency amplifier

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.
V

CE (sat) : max. 350mV

at Ic= 500mA / I

B= 25mA

zAbsolute maximum ratings (Ta=25°C) zEquivalent Circuit

Parameter Symbol Unit

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗

1

Single pulse, PW=1ms
Each Terminal Mounted on a Recommended

∗

2

Mounted on a 25mm×25mm×

∗

3

t

0.8mm ceramic substrate

V

CBO
CEO

V

EBO

V

I

CP

I

P

Tj

Tstg

C

C

Limits

30
30

6
1
2

0.4

150

−55 to +150 °C

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

CEO

EBO

CBO

I

EBO

I

CE(sat)

FE

h

f

T

Cob

30
30

6

−−

−−

−

270

−

−

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

BV
BV

V

Rev.C 1/2

zDimensions (Unit : mm)

ROHM : TUMT6 Abbreviated symbol : X08

V
V
V
A

1

∗

A

∗

W/TOTAL
W/TOTAL1.0

W/ELEMENT0.7

2

∗

3

∗

3

°C

V

−−

−−

−−

100 nA
100 nA

120 350 mV

680

−

320

−

7

−

C

I

V

C

I

V

E

I
VCB=30V

V

IC/IB=500mA/25mA

− V

MHz

VCE=2V, IE=−100mA, f=100MHz

pF

VCB=10V, IE=0A, f=1MHz

=10µA
=1mA
=10µA

EB

=6V

CE/IC

=2V/100mA

0.2Max.

(4)(5)(6)

Tr1 Tr2

(1) (2) (3)

∗

∗

Transistors

zPackaging specifications

Package

Type

US6X8

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1

1

(A)

C

0.1

0.01

Code
Basic ordering unit (pieces)

Ta=100°C

Ta=25°C

COLLECTOR CURRENT : I

Ta=−40°C

Fig.1 DC current gain

vs. collector current

Ta=25°C

Ta=100°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

VCE=2V
Pulsed

TR

3000

10

(V)

(V)

CE (sat)

BE (sat)

BASE SATURATION VOLTAGE : V

Ta=−40°C
Ta=100°C

1

0.1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

V

Ta=25°C

V

COLLECTOR CURRENT : I

BE(sat)

Ta=100°C

CE(sat)

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

Ta=25°C

Ta=−40°C

C

US6X8

10

(V)

CE(sat)

1

0.1

0.01

0.001

(A)

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=50/1

IC/IB=20/1

IC/IB=10/1

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tdon

100

10

tf

tr

Ta=25°C
V

CE

=2V

C

(A)

tstg

COLLECTOR CURRENT : I

0.001
0

BASE TO EMITTER VOLTAGE : V

Fig.4 Grounded emitter propagation

characteristics

VCE=2V

TRANSITION FREQUENCY : f

1.51.00.5

BE

(V)

10

0.01 0.1 1
EMITTER CURRENT : I

Ta=25°C
f=100MHz

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

SWITCHING TIME : (ns)

Ta=25°C
V

CE

=5V

I

C/IB

=20/1

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

C

(A)

100

Cib

Cob

10

1

0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

IC=0A
f=1MHz
Ta=25°C

EB

(V)

CB

(V)

Rev.C 2/2