ROHM US6X7 Technical data

US6X7

Transistors

General purpose amplification (12V, 1.5A)

US6X7

zApplication

Low frequency amplifier

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) : max. 200mV

at I

C=500mA / IB = 25mA

zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit

Parameter

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

1 Single pulse, PW=1ms

∗

2 Each Terminal Mounted on a Recommended

∗

3 Mounted on a 25mm 25mm t0.8mm ceramic substrate

∗

+

Symbol Unit

V

CBO
CEO

V

EBO

V

I

C

CP

I

P

C

Tj

Tstg

+

Limits

15
12

6

1.5
3

400

1

0.7

150

−55 to +150 °C

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

15

Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cutoff current I

Emitter cutoff current
Collector- emitter saturation voltage V
DC current gain h
Transition frequency f
Collector output capacitance Cob

Pulsed

∗

CBO

CEO

EBO

CBO

I

EBO

CE(sat)

FE

T

−−

12

−−

6

−−

−−

−−

85 200 mV

−

270

−

400

−

12

−

Rev.D 1/2

zDimensions (Unit : mm)

0.2Max.

ROHM : TUMT6 Abbreviated symbol: X07

V
V
V
A
A

mW/Total

W/Total

W/Element

°C

V
V

V
100 nA
100 nA

680

− V

MHz

−

pF

−

1

∗

2

∗

3

∗

3

∗

(1) (2) (3)

I

C

=10µA

I

C

=1mA

I

E

=10µA

VCB=15V

EB

=6V

V

IC/IB=500mA/25mA

CE/IC

=2V/200mA
VCE=2V, IE= −200mA, f=100MHz
VCB=10V, IE=0A, f=1MHz

(4)(5)(6)

∗

∗

Transistors

zPackaging specifications

US6X7

Package

Type

Code
Basic ordering unit (pieces)

US6X7

zElectrical characteristic curves

1000

FE

Ta=25°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.1 DC current gain

10

(A)

C

1

Ta=100°C

0.1

Ta=100°C

Ta= −40°C

VCE=2V
Pulsed

C

(A)

vs. collector current

VCE=2V
Pulsed

Ta=25°C

Taping

TR

3000

10

(V)

(V)

Ta= −40°C

CE (sat)

Ta=25°C

BE (sat)

BASE SATURATION VOLTAGE : V

Ta=100°C

1

0.1

0.01

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

V

BE(sat)

Ta=100°C

V

CE(sat)

COLLECTOR CURRENT : I

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

Ta=25°C

Ta= −40°C

C

(A)

1

(V)

CE(sat)

0.1

IC/IB=50/1

0.01

IC/IB=20/1

IC/IB=10/1

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

100

tstg

Ta=25°C
V

CE

=2V

C

(A)

Ta=25°C

CE

=2V

V
f=100MHz

0.01

COLLECTOR CURRENT : I

0.001
0

BASE TO EMITTER VOLTAGE : V

Ta= −40°C

BE

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

1

0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

IE=0A
f=1MHz
Ta=25°C

TRANSITION FREQUENCY : f

10

1.51.00.5

(V)

−0.001 −0.01 −0.1 −1 −10

EB

(V)

CB

(V)

VCE=2V
Ta=25°C
Pulsed

EMITTER CURRENT : I

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

tdon

tf

tr

C

Fig.6 Switching time

(A)

Fig.7 Collector output capacitacitance
vs.collector-base voltage
Emitter input capacitance
vs.emitter-base voltage

Rev.D 2/2