ROHM US6X4 Technical data

US6X4

Transistors

Low frequency amplifier (30V, 2A)

US6X4

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

At lc=1.5A / l

: max. 370mV

CE(sat)

=75mA

B

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperautre

∗1 Single pluse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended Land Pattern
∗3 Mounted on a 25mm

t

×

25mm

×

0.8mm ceramic substrate

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltae
Collector-emitter breakdown voltae BV
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Rev.B 1/2

zDimensions (Unit : mm)

Limits

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

30
30

6
2
4

400

1.0

150

−55 to +150°C°C

CBO

BV

CEO
EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 20 −

0.2Max.

ROHM : TUMT6 Abbreviated symbol : X04

zEquivalent circuit

Unit

V
V
V
A

∗1

A

∗2

mW

∗3

W

(1) (2) (3)

30
30

6

−−

−−

− 180

−−

−−

−−

100
100
370 mV

270 − 680

280

−

−

V
V

V
nA VCB=30V
nA VEB=6V

− V

MHz

pF

(4)(5)(6)

I

C

=10µA

I

C

=1mA

I

E

=10µA

IC=1.5A, IB=75mA

CE

=2V, IC=200mA
VCE=2V, IE=−200mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

∗

∗

Transistors

zPackaging specifications

Package

Type

US6X4

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

Code
Basic ordering unit (Pieces)

Ta=125 C
Ta=25 C

Ta= −25 C

VCE=−2V
Pulsed

Taping

TR

3000

10

(V)

IC/IB=20/1

Pulsed

CE(sat)

1

0.1

US6X4

Ta= −25 C
Ta=25 C
Ta=125 C

10

(V)

BE(sat)

Ta= −25 C
Ta=25 C

1

Ta=125 C

IC/IB=20/1
Pulsed

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

10

VCE=−2V
Pulsed

(A)

C

1

0.1

0.01

COLLECTOR CURRENT : I

0.001
0 1.4

0.2

0.6 0.8

0.4

BASE TO EMITTER CURRENT : VBE (V)

Fig.4 Grounded emitter propagation
characteristics

Ta=125 C

Ta=25 C

Ta= −25 C

1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current

1000

100

TRANSITION FREQUENCY : fT (MHz)

1.2

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product
vs. emitter current

Ta=25 C
VCE=−2V
f= 100MHz

0.1

BASE SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

10

COLLECTOR CURRENT : IC (A)

Fig.3 Base-emitter saturation voltage
vs. collector current

1000

Cob

100

Cib

10

0.001 0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

IC=0A
f=1MHz

Ta=25 C

CB

(V)

Rev.B 2/2