US6T7
Transistors
Low frequency amplifier (-30V, -1.5A)
US6T7
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat) : max. −370mV
At I
C = − 1A / IB = −50mA
zAbsolute maximum ratings (Ta=25°C)
C
C
Limits
−30
−30
−6
−1.5
−3
400
1.0 W
150
−55 to +150
Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Single pulse, PW=1ms
∗2
Each Terminal Mounted on a Recommended
∗3
Mounted on a 25mm
Parameter Symbol
t
×
25mm
×
0.8mm Ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
CBO
BV
CEO
BV
EBO
BV
CBO
I
EBO
I
V
CE(sat)
FE
h
T
f
Cob − 13 −
−30
−30
−6
270 − 680
Rev.B 1/2
zDimensions (Unit : mm)
zEquivalent circuit
∗1
∗2
∗3
(1) (2) (3)
−−
−−
−−
−−
−−
−−190
−
−100
−100
−370 mV
280
0.2Max.
ROHM : TUMT6 Abbreviated symbol : T07
(4)(5)(6)
V
I
C
=−10µA
V
I
C
=−1mA
V
I
E
=−10µA
nA VCB=−30V
nA VEB=−6V
IC=−1A, IB=−50mA
CE
− V
MHz
−
pF
=−2V, IC=−100mA
VCE=−2V, IE=100mA, f=100MHz
V
CB
=−10V, IE=0A, f=1MHz
∗
∗
US6T7
Transistors
zPackaging specifications
Type
US6T7
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE=−2V
Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Fig.4 Grounded emitter propagation
characteristics
1000
100
Ta=25°C
Ta=−40°C
Cib
VCE=−2V
Pulsed
C
(A)
BE
Ta=25°C
I
f=1MHz
(V)
C
=
1
(V)
(V)
CE (sat)
BE (sat)
V
BE(sat)
0.1
V
CE(sat)
0.01
0.001 0.01 0.1 101
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=−40°C
Ta=25°C
Ta=100°C
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 10
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
Ta=100°C
Ta=25°C
Ta=−40°C
Ta=25°C
V
f=100MHz
E
(A)
IC/IB=20/1
Pulsed
C
(A)
CE
=−2V
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
IC/IB=10/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tstg
100
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 10
COLLECTOR CURRENT : I
tf
Fig.6 Switching time
C
(A)
Ta=25°C
VCE=−5V
C/IB
I
tdon
tr
C
(A)
=20/1
0A
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
Cob
EB
(
V)
CB
(
V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B 2/2