ROHM US6T6 Technical data

Transistors

Low frequency amplifier

US6T6

zApplication

Low frequency amplifier
Driver

zFeatures

1)

A collector current is large.

<

CE(sat)

2) V
At I

−180mV

=

−

C

=

1A / I

−

B

=

50mA

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

Single pulse, Pw=1ms

∗1

Each terminal mounted on a recommended

∗2
∗3

Mounted on a 25mm

×

25mm

Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

t

×

0.8mm Ceramic substrate.

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Limits

−30

−30

−6

−2

−4

400

1.0 W

150

−55 to +150

BV
BV
BV

I
I

CE(sat)

V

CBO
EBO

h

f

CBO
CEO
EBO

FE
T

−15

−12

−6

270 − 680

Cob − 15 −

zDimensions (Unit : mm)

zEquivalent circuit

Unit

V
V
V
A

∗1

A

∗2

mW

∗3

°C
°C

−−

−−

−−

−−

−−

−−120

−

−100

−100

−180 mV

360

ROHM : TUMT6 Abbreviated symbol : T06

(4)(5)(6)

(1) (2) (3)

V

C

=−10µA

I

V

C

=−1mA

I

V

E

=−10µA

I
nA VCB=−15V
nA VEB=−6V

IC=−1A, IB=−50mA

CE

− V

MHz

−

pF

=−2V, IC=−200mA
VCE=−2V, IE=200mA, f=100MHz
V

CB

=−10V, IE=0A, f=1MHz

US6T6

0.2Max.

∗

∗

Rev.C 1/2

Transistors

zPackaging specifications

Package

Type

US6T6

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

−0.001 −0.01 −0.1

−10

(A)

C

−1

−0.1

−0.01

COLLECTOR CURRENT : I

−0.001

BASE TO EMITTER CURRENT : VBE (V

Fig.4 Grounded emitter propagation characteristics

1000

100

Code
Basic ordering unit (pieces)

Ta=100°C

25°C

−40°C

V

CE

=−2V

PULSED

COLLECTOR CURRENT : IC (

Fig1. DC current gain

vs.collector current

Ta=100°C

25°C

−40°C

CE

=−2V

V
Ta=25°C

PULSED

0 −0.5 −1

−1 −10

Cib

A)

Ta=25°C

I

E

=

0A

f=1MHz

Taping

TR

3000

10

V)

(

V)

(

CE(sat)

BE(sat)

1

0.1

0.01

BASE SATURATION VOLTAGE : V

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

1000

(MHz)

T

TRANSITION FREQUENCY : f

)

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : IC (

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs.collector current

100

10

0.001 0.01 0.1

EMITTER CURRENT : IE (

Fig.5 Gain bandwidth product

vs.emitter current

Ta=100°C

Ta=−40°C
Ta=25°C

I

C/IB

PULSED

V)

(

V

V

BE(sat)

CE(sat)

=20

CE(sat)

COLLECTOR SATURATION VOLTAGE : V

A)

Ta=25°C

CE=−2V

V
PULSED

110

A)

1000

100

10

SWITCHING TIME : (ns)

1

−0.001 −0.01 −0.1 −1

US6T6

−1

−0.1

IC/IB=50

20
10

−0.01

−0.001

−0.001 −0.01 −0.1 −1 −10

COLLECTOR CURRENT : IC (

Fig.3 Collector-emitter saturation voltage

vs.collector current

Ta=25°C

PULSED

C

=20 IB1=−20

I

IB=2

COLLECTOR CURRENT : I

Fig.6 Switching time

Ta=25°C

PULSED

A)

tstg

tdon

tf

tr

C

(A)

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Fig7. Collector output capacitance vs.collector-base voltage

Emitter input capacitance vs.emitter-base voltage

−1 −10 −100−0.1

EMITTER TO BASE VOLTAGE : V

COLLECTOR TO BASE VOLTAGE : V

Cob

EB

(

V)

CB

(

V)

Rev.C 2/2