ROHM US6M2 Technical data

US6M2

Transistors

2.5V Drive Nch+Pch MOSFET

US6M2

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET

zFeatures

1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.

2) High-speed switching, low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in G-S Protection Diode.

zApplications

Switching

zPackaging specifications zInner circuit

Type

US6M2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation
Channel temperature

Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.

Continuous
Pulsed
Continuous
Pulsed

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Tr1 : Nchannel Tr2 : Pchannel

∗1

∗1

∗2

Limits

12

±1.5

±6

0.6
6

1.0

0.7

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

125

Rth(ch-a)

∗

TUMT6

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

−20

−12
±1
±4

−0.4

−4

W / TOTAL

W / ELEMENT

°C/W / TOTAL

°C/W / ELEMENT179

(6)

(1)

Unit

°C
°C

0.2Max.

Abbreviated symbol : M02

(4)

(5)

∗1

∗2

∗1

(2)

V30
V
A
A
A
A

(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain

(3)

(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain

Rev.A 1/3

Transistors

N-ch
zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

V

SD

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

Min.−Typ. Max.

− 10 µAVGS=12V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 170 240 I

− 180 250 mΩ

− 240 340 I

1.5 −−SV

− 80 − pF V

− 1312− pF V

−

7

−

9

−

15

−

6

−

1.6

−

0.5

−

0.3

−−nC R

Min. Typ. Max.

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

mΩ

D

= 1.5A, VGS= 4V

I

D

= 1.5A, VGS= 2.5V

mΩ

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

2.2 nC

− nC I

V

DD

ID= 0.75A
V

GS

= 4.5V

R

L

= 20Ω

R

G

=10Ω

V

15V, VGS= 4.5V

DD

= 1.5A

D

= 10Ω, RG= 10Ω

L

Unit

US6M2

Conditions

15V

Conditions

Rev.A 2/3