ROHM US6M11 Technical data

L

T

C

T

1.5V Drive Nch+Pch MOSFET

US6M11

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET

zFeatures

1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.

2) Low on-resistance.

3) Low voltage drive (1.5V drive).

4) Built-in G-S Protection Diode.

zApplications zInner circuit

Switching

zPackaging specifications

Type

US6M11

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)

Continuous
Pulsed
Continuous
Pulsed

Power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Tr1 : Nchannel Tr2 : Pchannel

∗1

∗1

∗2

Limits

±10

±1.5

±6

0.5
6

−55 to +150

−12

±10
±1.3
±5.2

−0.5

−5.2

1.0

0.7

150

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

125

Rth(ch-a)

∗

179

°C/W / ELEMEN

TUMT6

(6)

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Unit

V20
V
A
A
A
A

W / TOTA

W / ELEMEN

°C
°C

°C/W / TOTAL

Abbreviated symbol : M11

(5)

∗1

∗1

(2)

(4)

∗2

(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain

(3)

(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain

0.2Max.

www.rohm.com

1/7

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A

<N-ch>
zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

<P-ch>
zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

− ±10 µAVGS= ±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

I

DSS

GS (th)

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 220 310 I

∗

1.6 −−SV

fs

− 110 − pF V

iss

− 1815− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

5

−

5

−

20

−

3

−

1.8

−

0.3

−

0.3

−−nC R

− 170 240 mΩ

∗

Min. Typ. Max.

∗

V

SD

−−1.2 V IS= 1.5A, VGS=0VForward voltage

Min.−Typ. Max.

I

GSS

−

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 190 260 I

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 400 600 I

∗

1.4 −−SV

fs

− 290 − pF V

iss

− 2821− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

8

−

10

−

30

−

9

−

2.4

−

0.6

−

0.4

−−nC R

− 280 390 mΩ

∗

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −1.3A, VGS=0VForward voltage

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC I

±10

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC I

Unit

DS
DS

= 1.5A, VGS= 4.5V

mΩ

D

= 1.5A, VGS= 2.5V

I

D

= 0.8A, VGS= 1.8V

mΩ

D

mΩ− 300 600 I

= 0.3A, VGS= 1.5V

D

DS
DS
GS

V

DD

ID= 1A

GS

V

L

10Ω

R

G

=10Ω

R
V

DD

= 1.5A

D

L

Unit

Unit

µAVGS=

DS
DS

= −1.3A, VGS= −4.5V

mΩ

D

= −0.6A, VGS= −2.5V

I

D

= −0.6A, VGS= −1.8V

mΩ

D

mΩ− 530 1060 I

= −0.2A, VGS= −1.5V

D

DS
DS
GS

V

DD

ID= −0.6A

GS

V

L

10Ω

R

G

= 10Ω

R
V

DD

= −1.3A

D

4.6Ω, RG= 10Ω

L

Unit

Conditions

= 20V, VGS=0V
= 10V, ID= 1mA

= 10V, ID= 1.5A
= 10V
=0V

10V

= 4.5V

10V, VGS= 4.5V

6.7Ω, RG= 10Ω

Conditions

Conditions

±10

V, VDS=0V

= −12V, VGS=0V
= −6V, ID= −1mA

= −6V, ID= −1.3A
= −6V

= 0V

−6V

= −4.5V

−6V, VGS= −4.5V

Conditions

Data Sheet US6M11

www.rohm.com

2/7

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A

V

V

V

zElectrical characteristic curves
<Nch>

1.5

[A]

D

1

0.5

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

VGS= 10
VGS= 4.5
VGS= 2.5

VGS= 1. 8V

VGS= 1.5V

VGS= 1.3V

VGS= 1. 2V

Ta=25°C
Pulsed

1.5
VGS= 4.5V

= 1.8V

V

GS

[A]

D

1

0.5

DRAIN CURRENT : I

0

0246810

VGS= 1. 5V

VGS= 1. 1V

VGS= 1.3V

Ta= 25°C
Pulsed

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

0.1

DRAIN CURRENT : I

0.01

0.001

00.5 11.52

Data Sheet US6M11

DR AIN-SOU RCE VOLTAGE : VDS[V] DR AIN-SOU RCE VOLTAGE : VDS[V]

Fi g.1 Typi cal Output C haract eris tics(Ⅰ) Fi g.2 T ypic al Output C haract eris tics(Ⅱ)

10000

Ta= 25°C
Pulsed

]

Ω

1000

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : I

Fi g.4 Stati c Dr ain- Source On- State

Resi stance vs. D rain C urr ent(Ⅰ)

10000

VGS= 1. 8V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.7 Stati c Dr ain- Source On- State

Resistance vs. Dr ain Cur rent(Ⅳ)

VGS= 1.5V
V

= 1.8V

GS

= 2.5V

V

GS

V

= 4.5V

GS

[A]

D

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

10000

VGS= 4.5V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.5 St atic D rain- Sourc e On-State

Resistance vs. Drain Curr ent(Ⅱ)

10000

VGS= 1. 5V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.8 St atic D rain- Sourc e On-State

Resi stance vs. D rain C urr ent(Ⅴ)

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

GATE- SOURCE VOLT AGE : VGS[V]

Fi g.3 T ypical Trans fer C haracter isti cs

10000

VGS= 2. 5V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stati c Dr ain- Source On- State

Resistance vs. Dr ain Cur rent(Ⅲ)

10

VDS= 10V
Pulsed

1

0.1

FOR WARD T RANSFER ADMITT ANCE : |Yfs | [S]

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.9 F orward Tr ansfer Admittance
vs. Dr ain Curr ent

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

www.rohm.com

3/7

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A