ROHM US6M1 Technical data
Transistors
4V+2.5V Drive Nch+Nch MOSFET
US6M1
zStructure zDimensions (Unit : mm)
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
zApplication
Power switching, DC / DC conve rter .
zPackaging specifications zEquivalent circuit
Type
US6M1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
20
±1.4
±5.6
0.6
5.6
−55 to +150
Limits
−20
−12
±1
±4
−0.4
−4
1
0.7
150
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Tr1 : Nchannel Tr2 : Pchannel
∗1
∗1
∗2
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗2 Mounted on a ceramic board.
Rth (ch-a)
125
∗
179
°C / W /TOTAL
°C / W / ELEMENT
TUMT6
Abbreviated symbol : M01
(6) (5) (4)
∗1
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
W / TOTAL
W / ELEMENT
(2) (3)
Unit
V30
V
A
A
A
A
°C
°C
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
US6M1
0.2Max.
Rev.B 1/7
Transistors
N-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=20V, VDS=0V
30 −−VI
−−1 µAV
1.0 − 2.5 V V
− 170 240 I
− 250 350 mΩ I
− 270 380 I
1.0 −−SI
− 70 − pF V
− 1512− pF V
−
6
−
6
−
13
−
8
−
1.4
−
−
−−nC I
Min. Typ. Max.
−−1.2 V IS=0.6A, VGS=0V
2.0 nC
0.6
0.3
Unit
=1mA, VGS=0V
D
=30V, VGS=0V
DS
=10V, ID=1mA
DS
=1.4A, VGS=10V
D
=1.4A, VGS=4.5V
D
=1.4A, VGS=4V
D
=1.4A, VDS=10V
D
=10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC V
Unit
=0.7A, VDD 15V
I
D
V
=10V
GS
R
=21Ω
L
R
=10Ω
G
V
15V RL=11Ω
DD
=5V RG=10Ω
GS
=1.4A
D
US6M1
Conditions
Test Conditions
Rev.B 2/7
Transistors
P-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
Min.−Typ. Max.
I
GSS
−−10 µAVGS=12V, VDS=0V
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
−−−1 µAV
−0.7 −−2.0 V V
− 280 390 I
∗
− 310 430 mΩ I
− 570 800 I
∗
0.7 −−SI
Y
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Q
− 150 − pF V
iss
− 2020− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
Min. Typ. Max.
SD
9
−
8
−
25
−
10
−
2.1
−
0.5
−
0.5
−−nC I
−−−1.2 V IS= −0.4A, VGS=0V
Unit
= −20V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −1A, VGS= −4.5V
D
= −1A, VGS= −4V
D
= −0.5A, VGS= −2.5V
D
= −0.5A, VDS= −10V
D
= −10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
= −0.5A, VDD −15V
I
D
V
GS
R
=30Ω
L
R
=10Ω
G
V
DD
GS
= −1A
D
Unit
= −4.5V
−15V
= −4.5V
Conditions
RL=15Ω
R
=10Ω
G
Test Conditions
US6M1
Rev.B 3/7
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