Transistors
4V+2.5V Drive Nch+Nch MOSFET
US6M1
zStructure zDimensions (Unit : mm)
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
zApplication
Power switching, DC / DC conve rter .
zPackaging specifications zEquivalent circuit
Type
US6M1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
20
±1.4
±5.6
0.6
5.6
−55 to +150
Limits
−20
−12
±1
±4
−0.4
−4
1
0.7
150
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Tr1 : Nchannel Tr2 : Pchannel
∗1
∗1
∗2
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗2 Mounted on a ceramic board.
Rth (ch-a)
125
∗
179
°C / W /TOTAL
°C / W / ELEMENT
TUMT6
Abbreviated symbol : M01
(6) (5) (4)
∗1
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
W / TOTAL
W / ELEMENT
(2) (3)
Unit
V30
V
A
A
A
A
°C
°C
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
US6M1
0.2Max.
Rev.B 1/7
Transistors
N-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=20V, VDS=0V
30 −−VI
−−1 µAV
1.0 − 2.5 V V
− 170 240 I
− 250 350 mΩ I
− 270 380 I
1.0 −−SI
− 70 − pF V
− 1512− pF V
−
6
−
6
−
13
−
8
−
1.4
−
−
−−nC I
Min. Typ. Max.
−−1.2 V IS=0.6A, VGS=0V
2.0 nC
0.6
0.3
Unit
=1mA, VGS=0V
D
=30V, VGS=0V
DS
=10V, ID=1mA
DS
=1.4A, VGS=10V
D
=1.4A, VGS=4.5V
D
=1.4A, VGS=4V
D
=1.4A, VDS=10V
D
=10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC V
Unit
=0.7A, VDD 15V
I
D
V
=10V
GS
R
=21Ω
L
R
=10Ω
G
V
15V RL=11Ω
DD
=5V RG=10Ω
GS
=1.4A
D
US6M1
Conditions
Test Conditions
Rev.B 2/7
Transistors
P-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
Min.−Typ. Max.
I
GSS
−−10 µAVGS=12V, VDS=0V
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
−−−1 µAV
−0.7 −−2.0 V V
− 280 390 I
∗
− 310 430 mΩ I
− 570 800 I
∗
0.7 −−SI
Y
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Q
− 150 − pF V
iss
− 2020− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
Min. Typ. Max.
SD
9
−
8
−
25
−
10
−
2.1
−
0.5
−
0.5
−−nC I
−−−1.2 V IS= −0.4A, VGS=0V
Unit
= −20V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −1A, VGS= −4.5V
D
= −1A, VGS= −4V
D
= −0.5A, VGS= −2.5V
D
= −0.5A, VDS= −10V
D
= −10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
= −0.5A, VDD −15V
I
D
V
GS
R
=30Ω
L
R
=10Ω
G
V
DD
GS
= −1A
D
Unit
= −4.5V
−15V
= −4.5V
Conditions
RL=15Ω
R
=10Ω
G
Test Conditions
US6M1
Rev.B 3/7
Transistors
N-ch
zElectrical characteristic curves
1000
C
(pF)
100
10
CAPACITANCE : C
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
(A)
1
Ta=125°C
D
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : V
Fig.4
Typical Transfer Characteristics
10
(Ω)
DS (on)
R
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
iss
C
rss
C
oss
Ta=25°C
f=1MHz
=0V
V
GS
DS
VDS=10V
Pulsed
GS
VGS=4.5V
Pulsed
US6M1
1000
t
(ns)
SWITCHING TIME : t
(A)
f
100
t
d (off)
10
t
d (on)
t
r
1
0.01 0.1 1 10
DRAIN CURRENT : I
Ta=25°C
V
DD
V
GS
R
G
Pulsed
(A)
D
=15V
=4.5V
=10Ω
Fig.2 Switching Characteristics
1.0
0.9
(Ω)
0.8
DS (on)
R
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0123456789
(V)
ID=1.5A
ID=0.75A
GATE-SOURCE VOLTAGE : V
Ta=25°C
Pulsed
GS
10
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
(Ω)
DS (on)
R
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4.0V
Pulsed
6
Ta=25°C
=15V
V
DD
(V)
5
=1.5A
I
D
GS
=10Ω
R
G
Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0 0.5 1 1.5 2
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
Ta=125°C
(A)
Ta=75°C
s
Ta=25°C
1
Ta= −25°C
0.1
SOURCE CURRENT : I
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
Fig.6 Source Current vs.
Source-Drain Voltage
10
(Ω)
DS (on)
R
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
VGS=0V
Pulsed
SD
VGS=2.5V
Pulsed
(V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
(A)
D
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
(A)
D
Rev.B 4/7
Transistors
P-ch
zElectrical characteristic curves
1000
(pF)
100
CAPACITANCE : C
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
(A)
1
D
0.1
Ta=25°C
f=1MHz
=0V
V
GS
C
C
C
DS
Ta=25°C
VDS= −10V
Pulsed
US6M1
10000
1000
(ns)
iss
rss
oss
(V)
SWITCHING TIME : t
t
f
100
t
d (off)
t
d (on)
10
t
r
1
0.01 0.1 1 10
DRAIN CURRENT : −I
Ta=25°C
= −15V
V
DD
= −4.5V
V
GS
=10Ω
R
G
Pulsed
(A)
D
Fig.2 Switching Characteristics
1000
(mΩ)
DS (on)
750
R
500
ID= −1A
ID= −0.5A
Ta=25°C
Pulsed
8
(V)
7
GS
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : −V
0
0 0.5 1 1.5 2 2.5 3
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
(A)
S
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=25°C
= −15V
V
DD
= −1A
I
D
=10Ω
R
G
Pulsed
VGS=0V
Pulsed
0.01
DRAIN CURRENT : −I
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
GATE-SOURCE VOLTAGE : −V
Fig.4
Typical Transfer Characteristics
250
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
024681012
(V)
GS
GATE-SOURCE VOLTAGE : −V
(V)
GS
Fig.5 Static Drain-Source
On-State Resistance vs.
0.1
REVERSE DRAIN CURRENT : −I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : −V
Fig.6 Source Current vs.
Source-Drain Voltage
(V)
SD
Gate-Source Voltage
10000
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
1000
Ta=25°C
Ta= −25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
100
0.01 0.1 1 10
DRAIN CURRENT : −I
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
V
=
GS
Pulsed
(A)
D
−
4.5V
10000
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
1000
Ta=25°C
Ta= −25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
100
0.01 0.1 1 10
DRAIN CURRENT : −I
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
V
GS
Pulsed
(A)
D
=
−
4V
10000
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
100
0.01 0.1 1 10
DRAIN CURRENT : −I
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
V
=
GS
Pulsed
(A)
D
−
2.5V
Rev.B 5/7
Transistors
N-ch
zMeasurement circuit
V
GS
R
G
D
I
D.U.T.
US6M1
Pulse Width
V
DS
V
R
L
V
DD
GS
V
DS
t
50%
10%
10% 10%
d(on)
t
on
90%
50%
90% 90%
t
t
r
d(off)
t
f
t
off
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
G(Const.)
R
G
Fig.2-1 Gate Charge Measurement Circuit
D
I
D.U.T.
V
DS
R
L
V
DD
V
GS
Qgs Qgd
Fig.2-2 Gate Charge Waveform
g
Q
Charge
Rev.B 6/7
Transistors
P-ch
zMeasurement circuit
V
GS
R
G
D
I
D.U.T.
US6M1
Pulse Width
GS
V
DS
R
L
V
DD
V
V
10%
50%
90%
50%
10% 10%
DS
90% 90%
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
Fig.3-1 Switching Time Measurement Circuit
V
I
G(Const.)
GS
R
G
D
I
D.U.T.
V
DS
R
L
V
DD
Fig.4-1 Gate Charge Measurement Circuit
Fig.3-2 Switching Waveforms
V
G
g
Q
V
GS
Qgs Qgd
Charge
Fig.4-2 Gate Charge Waveform
Rev.B 7/7
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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