ROHM US6K1 Schematic [ru]

C

T

2.5V Drive Nch+Nch MOSFET

US6K1

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space savingsmall surface mount package (TUMT6).

3) Low voltage drive (2.5V drive).

zApplications

Switching

zPackaging specifications zInner circuit

TUMT6

0.2Max.

Abbreviated symbol : K01

Type

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

US6K1

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current

(Body diode)
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

Rth(ch-a)

(6)

(5)

∗2

∗1

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2)

(4)

∗1

∗2

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain

(3)

(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

Limits Unit

P

DSS
GSS

D

DP

S

SP

D

∗1

∗1

∗2

30
12

±1.5

±6

0.6
6

1.0

150

−55 to +150

VV
VV
AI
AI
AI
AI

W / TOTAL

W / ELEMENT0.7

°CTch
°CTstg

125

∗

179

°C/W / TOTAL

°C/W / ELEMEN

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c

○

2009 ROHM Co., Ltd. All rights reserved.

1/3

2009.03 - Rev.B

US6K1

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

Unit

Conditions

− 10 µAVGS=12V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 170 240 I

mΩ

− 180 250 mΩ

− 240 340 I

mΩ

1.5 −−SV

− 80 − pF V

− 1312− pF V

−

−

−

−

−

−

−

−−nC I

Min. Typ. Max.

− pF f=1MHz

7

− ns

9

− ns

15

− ns

6

− ns

1.6

2.2 nC

0.5

− nC V

0.3

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

D

= 1.5A, VGS= 4.0V

I

D

= 1.5A, VGS= 2.5V

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

VDD 15V

ID= 0.75A

GS

= 4.5V

V

L

= 20Ω

R

G

=10Ω

R

15V

V

DD

= 4.5V

GS

= 1.5A

D

Conditions

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/3

2009.03 - Rev.B