ROHM US6H23 Schematic [ru]
US6H23
Transistors
Dual digital transistors
US6H23
zFeatures
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C=600 mA.
zStructure
NPN silicon epitaxial planar transistor
zPackaging specifications and h
Package
Type
US6H23
Packaging type
Code
Basic ordering unit (pieces)
FE zEquivalent circuit
TUMT6
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a recommended land
∗3 Mounted on a ceramic board
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj 150
Tstg
Limits
20
20
12
600
1A
0.4(TOTAL)
1.0(TOTAL) W
0.7(ELEMENT) W
−55 to +150
1/3
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : H23
(6) (5) (4)
R=4.7kΩ
R=4.7kΩ
TR1 TR2
(1) (2) (3)
Unit
V
V
V
mA
∗1
∗2
W
∗3
∗3
°C
°C
0.2Max.
(1) : Emitter<<Tr1>>
(2) : Base<<Tr1>>
(3) : Collector<<Tr2>>
(4) : Emitter<<Tr2>>
(5) : Base<<Tr2>>
(6) : Collector<<Tr1>>
Transistor
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
R
on
= ×R
vi−v
v
BV
BV
BV
V
v
I
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Input resistance
Output ON resistance
∗
Characteristics of built-in transistor.
zR
on measurement circuit
RL=1kΩ
v
100mV(rms)
i
f=1kHz
I
CBO
I
EBO
CE (sat)
h
FE
f
C
R
R
0
0
CEO
CBO
EBO
T
ob
on
∗
∗
L
V
20
20
12
−−
−−
−
820
−
− 6
3.29
−
v
0
−
−
−
40
−
150
4.7
0.55
− V
− V
− V
500 nA
500 nA
150 mV
2700 −
− MHz
− pF
6.11 kΩ
− Ω
=1mA
I
C
I
=50µA
C
=50µA
I
E
V
=20V
CB
=12V
V
EB
/ IB=50mA / 2.5mA
I
C
V
=5V, IC=50mA
CE
V
=10V, IE=50mA, f=100MHz
CE
=10V, IE= 0mA, f=1MHz
V
CB
−
VI=5V, R
=1kΩ, f=1kHz
L
US6H23
Fig.1 Output "ON" resistance (Ron)
measurement circuit
2/3
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