ROHM US5U38 Technical data

Transistor

s

(

2.5V Drive Pch+SBD MOSFET

US5U38

zStructure

zDimension

Silicon P-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The US5U38 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.

2) Low on-resistance with fast sw itching.

3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage.

zApplications

Switchi ng

zPackaging specifications

Type

US5U38

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Channel temperature

Power dissipation
<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

<MOSFET AND Di>
Power dissipation
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

Symbol

V

DSS

V

GSS

Continuous
Pulsed
Continuous
Pulsed

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

P

D

V

RM

V

R

I

F

∗2

I

FSM

Tj

∗3

P

D

∗3

P

D

Tstg

•

1cyc. ∗3 Mounted on a ceramic board

Limits Unit

−20

±12
±1.0
±4.0

−0.4

−4.0

0.7

W / ELEMENT

150

0.5

W / ELEMENT

1.0

−55 to +150

W / TOTAL

TUMT5

zEquivalent circuit

∗1 ESD protection diode
∗2 Body diode

V
V
A
A
A
A

°C

V25
V20
A0.7
A3.0

°C

°C

Unit : mm)

Abbreviated symbol : U38

(5)

∗1

(1) (2)

2.0

1.3

US5U38

0.2Max.

(4)

∗2

(1)Gate
(2)Source
(3)Anode

(3)

(4)Cathode
(5)Drain

1/5

Transistor

zElectrical characteristics (T a=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

<

Body diode (source−drain)

Forward voltage

>

Parameter Symbol

I

GSS

(BR) DSS

V

I

DSS

V

GS (th)

DS (on)

R

Y

fs

C

iss

C

oss
rss

C

t

d (on)

t

r

t

d (off)

t

f

g

Q

Q

gs
gd

Q

>

Parameter Symbol

V

SD

∗

∗

∗

∗

∗

∗

∗

∗

∗

Typ.

−

−

−

−

280
310
570

−

150

20
20

9

8
25
10

2.1

0.5

0.5

Max.

±10

−

−1

−2.0

390
430
800

−

−

−

−

−

−

−

−

−

−

− nC

Min.

−

−20

−

−0.7

−

−

−

0.7

−

−

−

−

−

−

−

−

−

−

Min. Typ. Max.

Unit

µAVGS=±12V, VDS=0V

VID=−1mA, VGS=0V

µAVDS=−20V, VGS=0V

VVDS=−10V, ID=−1mA

mΩ I

D

mΩ ID=−1A, VGS=−4.0V
mΩ I

D

SV
pF VDS=−10V
pF VGS=0V
pF f=1MHz

ns ID=−0.5A

V

ns

V

ns

R

ns

R
I

D

nC

V

nC

R

Unit

Conditions

=−1A, VGS=−4.5V

=−0.5A, VGS=−2.5V

DS

=−10V, ID=−0.5A

DD

−15V

GS

=−4.5V

L

30Ω

G

=10Ω

=−1A,

V

DD

GS

=−4.5V

L

15Ω, RG=10Ω

Conditions

−−−1.2 V IS=−0.4A, VGS=0V

US5U38

−15V

<Di>

Parameter Symbol
Forward voltage
Reverse current

Min. Typ. Max.

V

F

−−0.49 V IF=0.7A

R

−−200 µAVR=20V

I

Unit

Conditions

2/5