Transistor
s
(
2.5V Drive Pch+SBD MOSFET
US5U38
zStructure
zDimension
Silicon P-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The US5U38 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast sw itching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zApplications
Switchi ng
zPackaging specifications
Type
US5U38
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Power dissipation
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
P
D
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
P
D
∗3
P
D
Tstg
•
1cyc. ∗3 Mounted on a ceramic board
Limits Unit
−20
±12
±1.0
±4.0
−0.4
−4.0
0.7
W / ELEMENT
150
0.5
W / ELEMENT
1.0
−55 to +150
W / TOTAL
TUMT5
zEquivalent circuit
∗1 ESD protection diode
∗2 Body diode
V
V
A
A
A
A
°C
V25
V20
A0.7
A3.0
°C
°C
Unit : mm)
Abbreviated symbol : U38
(5)
∗1
(1) (2)
2.0
1.3
US5U38
0.2Max.
(4)
∗2
(1)Gate
(2)Source
(3)Anode
(3)
(4)Cathode
(5)Drain
1/5
Transistor
zElectrical characteristics (T a=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
<
Body diode (source−drain)
Forward voltage
>
Parameter Symbol
I
GSS
(BR) DSS
V
I
DSS
V
GS (th)
DS (on)
R
Y
fs
C
iss
C
oss
rss
C
t
d (on)
t
r
t
d (off)
t
f
g
Q
Q
gs
gd
Q
>
Parameter Symbol
V
SD
∗
∗
∗
∗
∗
∗
∗
∗
∗
Typ.
−
−
−
−
280
310
570
−
150
20
20
9
8
25
10
2.1
0.5
0.5
Max.
±10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
− nC
Min.
−
−20
−
−0.7
−
−
−
0.7
−
−
−
−
−
−
−
−
−
−
Min. Typ. Max.
Unit
µAVGS=±12V, VDS=0V
VID=−1mA, VGS=0V
µAVDS=−20V, VGS=0V
VVDS=−10V, ID=−1mA
mΩ I
D
mΩ ID=−1A, VGS=−4.0V
mΩ I
D
SV
pF VDS=−10V
pF VGS=0V
pF f=1MHz
ns ID=−0.5A
V
ns
V
ns
R
ns
R
I
D
nC
V
nC
R
Unit
Conditions
=−1A, VGS=−4.5V
=−0.5A, VGS=−2.5V
DS
=−10V, ID=−0.5A
DD
−15V
GS
=−4.5V
L
30Ω
G
=10Ω
=−1A,
V
DD
GS
=−4.5V
L
15Ω, RG=10Ω
Conditions
−−−1.2 V IS=−0.4A, VGS=0V
US5U38
−15V
<Di>
Parameter Symbol
Forward voltage
Reverse current
Min. Typ. Max.
V
F
−−0.49 V IF=0.7A
R
−−200 µAVR=20V
I
Unit
Conditions
2/5
Transistor
zElectrical characteristic curves
DRAIN CURRENT : −ID (A)
0.01
10
1
Ta=125°C
75°C
25°C
0.1
−25°C
VDS=−10V
Pulsed
10000
1000
(on)[mΩ]
DS
: R
Ta=125°C
75°C
25°C
−25°C
VGS=−4.5V
Pulsed
10000
(on)[mΩ]
1000
DS
: R
Ta=125°C
75°C
25°C
−25°C
US5U38
VGS=−4V
Pulsed
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
GATE−SOURCE VOLTAGE : -VGS[V]
Fig.1 Typical Transfer Characteristics
100
0.01 0.1 1
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
Fig.2 Static Drain−Source On−State
Resistance
DRAIN CURRENT : −ID[A]
vs.Drain Current
10
( Ι )
100
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
0.01 0.1 1
DRAIN CURRENT : −ID[A]
Fig.3 Static Drain−Source On−State
Resistance vs.Drain Current
10
( ΙΙ )
10000
Ta=125°C
75°C
25°C
−25°C
1000
(on)[mΩ]
DS
: R
100
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
0.01 0.1 1
DRAIN CURRENT : −ID[A]
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current
VGS=−2.5V
Pulsed
( ΙΙΙ )
1000
I
D=−
750
500
(on)[mΩ]
DS
: R
250
STATIC DRAIN−SOURCE ON−STATE RESISTANCE
10
0
GATE−SOURCE VOLTAGE : −VGS[V]
0.5A
−1A
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
Ta=25°C
Pulsed
100128426
10000
1000
VGS=−2.5V
(on)[mΩ]
DS
: R
100
STATIC DRAIN-SOURCE ON−STATE RESISTANCE
−4.0V
−4.5V
0.01 0.1 1
DRAIN CURRENT : −ID[A]
Fig.6 Static Drain−Source On−State
Resistance vs.Drain Current
Ta=25 C
Pulsed
10
10
[A]
S
1
Ta=125°C
75°C
25°C
−25°C
0.1
REVERSE DRAIN CURRENT : −I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE−DRAIN VOLTAGE : −V
Fig.7 Reverse Drain Current
vs. Source-Drain Current
VGS=0V
Pulsed
SD
[V]
1000
100
CAPACITANCE : C [pF]
10
0.01 0.1 1 10 100
DRAIN−SOURCE VOLTAGE : −V
Fig.8 Typical Capactitance
vs.Drain−Source Voltage
Ta=25 C
f=1MHZ
GS
=0V
V
C
iss
C
rss
C
oss
DS
[V]
10000
1000
t
100
10
SWITCHING TIME : t [ns]
1
0.01 0.1 1 10
f
t
d(off)
t
d(on)
t
r
DRAIN CURRENT : −I
D
[A]
Ta=25°C
V
V
R
Pulsed
Fig.9 Switching Characteristics
DD
GS
G
=10Ω
=−15V
=−4.5V
3/5
US5U38
Transistor
5
[V]
GS
4
3
2
1
GATE-SOURCE VOLTAGE: -V
0
0 0.5 1 1.5 2 2.5 3
TOTAL GATE CHARGE : Qg[nC]
Fig.10 Dynamic Input Characteristics
Ta=25 C
DD
=−15V
V
D
=−1A
I
G
=10Ω
R
Pulsed
100000
REVERSE CUR RENT : IR [uA]
Pulsed
10000
1000
100
10
1
0.1
0.01
0 5 10 15 20 25
Fig.11 Reverse Current vs. Reverse Voltage
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V
characteristics and therefore, higher leak current. Please consider enough the
F
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
Ta = 125
Ta = 75
Ta = 25
Ta= - 25
REVERSE VOLTAGE : VR [V]
℃
℃
℃
℃
1
pulsed
(A)
F
0.1
0.01
FORWARD CURRENT : I
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : VF(V)
Ta = 125
Ta = 75
Ta = 25
Ta= - 25
℃
℃
℃
℃
4/5
Transistor
zMeasurement circuits
V
GS
10%
50%
US5U38
Pulse Width
50%
90%
D
D.U.T.
I
V
DS
R
L
V
DD
V
GS
R
G
Fig.13 Switching Time Measurement Circuit
IG(Const)
I
VGS
RG
D
D.U.T.
VDS
RL
VDD
Fig.15 Gate Charge Measurement Circuit
10%
t
d(on)
90%
t
r
t
on
V
DS
Fig.14 Switching Waveforms
V
G
V
GS
Qgs Qgd
Fig.16 Gate Charge Waveforms
Qg
t
d(off)
10%
t
f
t
off
Charge
90%
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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