ROHM US5U35 Schematic [ru]

Transistor

s

(

4V Drive Pch+SBD MOSFET

US5U35

zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The US5U35 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.

2) With fast switching.

3) Built-in schottky barrier diode has low forward voltage.

zApplications

Switchi ng

zPackaging specifications

Type

US5U35

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zDimension

TUMT5

Unit : mm)

Abbreviated symbol : U35

zEquivalent circuit

(5)

US5U35

2.0

1.3

0.2Max.

(4)

∗2

∗1 ESD protection diode
∗2 Body diode

(1) (2)

∗1

(3)

(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain

1/5

Transistor

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Channel temperature

Power dissipation

Continuous
Pulsed
Continuous
Pulsed

Symbol

V

DSS

V

GSS

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

P

D

Limits Unit

−45

±20
±0.7
±2.8

−0.4

−2.8

0.7

W / ELEMENT

<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

V

I

V

I

FSM

Tj

P

RM

R

F

∗2

150

∗3

D

0.5

W / ELEMENT

<MOSFET AND Di>

∗3

Power dissipation
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

P

D

Tstg

•

1cyc. ∗3 Mounted on a ceramic board

1.0

−55 to +150

W / TOTAL

zElectrical characteristics (T a=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

<

Body diode (source−drain)

Forward voltage

∗ Pulsed

>

Parameter Symbol

I

GSS

(BR) DSS

V

I

DSS

V

GS (th)

R

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

gs

Q

gd

Q

>

Parameter Symbol

V

SD

Typ.

−

−

−

−

0.6

0.9

1.0

−

120

14
11

6
5

17

6

1.7

0.8

0.5

Max.

Unit

±10

µAVGS=±20V, VDS=0V

−

VID=−1mA, VGS=0V

−1

µAVDS=−45V, VGS=0V

−2.5

VVDS=−10V, ID=−1mA

0.8

Ω I

1.3

Ω ID=−0.7A, VGS=−4.5V

1.4

Ω I

−

SV

−

pF VDS=−10V

−

pF VGS=0V

−

pF f=1MHz

−

ns ID=−0.35A

−

ns

−

ns

−

ns

−

nC

−

nC

− nC

Unit

D

=−0.7A, VGS=−10V

D

=−0.35A, VGS=−4.0V

DS

V

DD

V

GS

R

L

71Ω

R

G

=10Ω

V

DD

I

D

=−0.7A

RL 36Ω,

Min.

−

−45

−

−1.0

−

∗

−

−

∗

0.6

−

−

−

∗

−

∗

−

∗

−

∗

−

−

−

−

Min. Typ. Max.

∗

−−−1.2 V IS=−0.7A, VGS=0V

<Di>

Parameter Symbol
Forward voltage
Reverse current

Min. Typ. Max.

V

−−0.55 V IF=100mA

F

I

R

−−30 µAVR=10V

Unit

V
V
A
A
A
A

°C

V45
V40

mA100

A1.0

°C

°C

Conditions

=−10V, ID=−0.7A

−25V

=−10V

V

−25V,

GS

=−5V

R

G

=10Ω

Conditions

Conditions

US5U35

2/5

Transistor

zElectrical characteristic curves

(A)

D

0.001

DRAIN CURRENT : −I

0.1

0.01

1

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

VDS=−10V
Pulsed

US5U35

10

(on) (Ω)

Ta=125°C
Ta=75°C

DS

Ta=25°C
Ta=−25°C

1

VGS=−10V
Pulsed

10

Ta=125°C

(on) (Ω)

Ta=75°C

DS

Ta=25°C
Ta=−25°C

1

VGS=−4.5V
Pulsed

0.0001

1.0

1.5

2.0 2.5 3.0 4.03.5

GATE-SOURCE VOLTAGE : −VGS (V)

Fig.1 Typical Transfer Characteristics

10

Ta=125°C
Ta=75°C

(on) (Ω)

Ta=25°C

DS

Ta=−25°C

1

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01 0.1

DRAIN CURRENT : −ID (A)

VGS=−4V
Pulsed

Fig.4 Static Drain-Source

On-State Resistance vs.
Drain Current(ΙΙΙ)

10

(V)

GS

8

6

4

2

GATE-SOURCE VOLTAGE : −V

0

01

TOTAL GATE CHARGE : Qg (nC)

Ta=25°C

DD

=−25V

V

D

=−0.7A

I

G

=10Ω

R
Pulsed

23

Fig.7 Dynamic Input Characteristics

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01 0.1

Fig.2 Static Drain-Source

1000

100

10

CAPACITANCE : C (pF)

1

0.01 0.1 1 10 100

1

DRAIN-SOURCE VOLTAGE : −VDS (V)

Fig.5 Typical Capacitance

1

Ta=125°C
Ta=75°C
Ta=25°C

0.1

Ta=−25°C

0.01

0.001

SOURCE CURRENT : −IS (A)

0.0001
0 0.5

4

SOURCE-DRAIN VOLTAGE : −VSD (V)

Fig.8 Source Current vs.

DRAIN CURRENT : −ID (A)

On-State Resistance vs.
Drain Current(Ι)

Ta=25°C
f=1MHZ

GS

=0V

V

C

C
C

vs. Drain-Source Voltage

VGS=0V
Pulsed

1.0

Source-Drain Voltage

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01 0.1

1

DRAIN CURRENT : −ID (A)

Fig.3 Static Drain-Source

On-State Resistance vs.
Drain Current(ΙΙ)

1000

t

iss

oss

rss

100

SWITCHING TIME : t (ns)

f

t

d(off)

10

t

d(on)

t

r

1

0.01 0.1 1

DRAIN CURRENT : −ID (A)

Fig.6 Switching Characteristics

10

Ta=−25°C

1

Ta=25°C
Ta=75°C

(S)

Ta=125°C

: Yfs

0.1

FORWARD TRANSFER ADMITTANCE

0.01

1.5

0.001 0.10.01 1

DRAIN CURRENT : −I

Fig.9 Forward Transfer Admittance

vs.Drain Current

Ta=25°C

DD=−25V

V

GS=−10V

V

G=10Ω

R
Pulsed

VGS=−10V
Pulsed

D

(A)

1

3/5