ROHM US5U2 Technical data

US5U2
Transistors
4V Drive Nch+SBD MOSFET
US5U2
zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET / Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) 4V drive.
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackaging specifications zInner circuit
Type
US5U2
Package Code Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter Drain-source voltage Gate-source voltage
Drain current Source current
(Body diode) Power dissipation
Channel temperature
1 Pw10µs, Duty cycle1%2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol
DSS GSS
D
DP
S
SP
P
D
Limits Unit
30 20
±1.4
1
±5.6
0.6
12
5.6
150
TUMT5
(5)
(1) (2)
1 ESD protection diode2 Body diode
VV VV AI AI AI AI
W / ELEMENT0.7
°CTch
2.0
1.3
Abbreviated symbol : U02
(4)
2
1
(3)
(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain
0.2Max.
Rev.B 1/4
Transistors
<Di>
Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature
1 60Hz 1cycle2 Mounted on ceramic board
<MOSFET and Di>
Parameter Symbol Total power dissipation Range of storage temperature
1 Mounted on a ceramic board
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter Symbol Gate-source leakage
Drain-source breakdown voltage Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge
Gate-source charge Gate-drain charge
Pulsed
<Body diode characteristics (source-drain)>
Parameter Symbol
<Di>
Parameter Symbol Forward voltage
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C C
t
d (on)
t
d (off)
Q
Q
V
GSS
DSS
Y
t
t
Q
SD
V
I
fs
iss oss rss
r
f
g gs gd
F
R
Symbol
RM
R
I
F
I
FSM
P
D
Tj
12
Limits Unit
30 20
0.5
2.0
0.5
W / ELEMENT
150
Limits Unit
1
D
1.0
W / TOTALP
55 to +150
Min.−Typ. Max.
Unit
10 µAVGS=20V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
1.0 2.5 V V
170 240 I
250 350 m
270 380 I
1.0 −−SV
m
m
70 pF V
1512− pF V
−−nC R
Min. Typ. Max.
pF f=1MHz
6
ns
6
ns
13
ns
8
ns
1.4
2.0 nC
0.6
nC I
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.4A, VGS= 10V
D
I
= 1.4A, VGS= 4.5V
D
= 1.4A, VGS= 4V
D
= 10V, ID= 1.4A
DS
= 10V
DS
=0V
GS
V
DD
15V
ID= 0.7A V
GS
= 10V
R
L
= 21
R
G
=10
15V, VGS= 5V
V
DD
= 1.4A
D
= 11Ω, RG= 10
L
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Min. Typ. Max.
Unit
−−0.36 V IF= 0.1A
−−0.47 V I
0.5A
F
−−100 µAVR= 20VReverse current
US5U2
VV VV A A
°C
°CTstg
Conditions
Conditions
Conditions
Rev.B 2/4
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