ROHM UMZ8.2 Datasheet
UMZ8.2T
Diodes
Zener diode
UMZ8.2T
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Applications
Constant voltage control
Noise suppression on signal line
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Features
1) Small surface mounting type. (UMD3)
2) Multiple diodes with common cathode configuration.
3) High reliability.
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Construction
Silicon epitaxial planar
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Circuit
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External dimensions
(Units : mm)
2.1±0.1
1.25±0.1
0.1Min.
0~0.1
0.15±0.05
0.3±0.1
2.0±0.2
1.3±0.1
0.650.65
0.9±0.1
0.3 0.6
6 R
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
(All leads have the same dimensions)
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Absolute maximum ratings
(Ta = 25°C)
Parameter Symbol Limits Unit
P
200 mW
Tj 150
°C
Tstg
°C
−55~+150
Power dissipation
∗
Junction temperature
Storage temperature
∗ Total of 2 elements.
!!!!
Electrical characteristics
(Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
V
Z
7.76 − 8.64 V IZ=5mA
I
R
−−0.50 µAVR=5V
Z
Z
−−30 Ω IZ=5mA
Z
ZK
−−60 Ω IZ=0.5mA
Zener voltage
Reverse current
Operating resistance
Rising operating resistance
UMZ8.2T
Diodes
!!!!
Electrical characteristic curves
(Ta = 25°C)
0
ZENER VOLTAGE : V
Z
(V)
ZENER CURRENT : I
Z
(mA)
2468101214
100n
1µ
10µ
100µ
1m
10m
100m
Fig. 1 Zener voltage characteristics
0.1 1 10
1
10
100
DYNAMIC IMPEADANCE : Z
Z
(Ω)
ZENER CURRENT : I
Z
(mA)
Fig. 2 Operating resistance
Zener current characteristics
Ta=25°C
0025 50 100 150
300
200
100
POWER DISSIPATION : Pd (mW)
AMBIENT TEMPERATURE : Ta (°C)
Fig. 3 Derating curve
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