Diodes
Zener Diode
UMZ6.8N
Applications
!
Constant voltage control
For the ESD measure of a signal line
External dimensions
!!!!
2.0±0.2
1.3±0.1
0.650.65
(Units: mm)
0.9±0.1
0.6
0.3
UMZ6.8N
Features
!
1) Small surface mounting type (UMD3)
2) Composite type with two cathode common elements
3) High reliability
ROHM : UMD3
EIAJ : SC-70
Construction
!!!!
JEDEC : SOT-323
Silicon epitaxial planar
Circuit
!!!!
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Power dissipation
Junction temperature 150 °C
Storage temperature °C
∗
Total of 2 elements
∗
(Ta=25°C)
P
Tj
Tstg
200 mW
−55~+150
6 C
2.1±0.1
1.25±0.1
0.3±0.1
(All pins have the same dimensions)
0.15±0.05
0~0.1
0.1Min.
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Zener voltage
Reverse current
Operating resistance
Capacitance between terminals
(Ta=25°C)
Z
V
I
R
Z
Z
T
C
6.47 7.14 V IZ=5mA
−−0.5 VR=3.5V
−−40 Ω IZ=5mA
−
−
µA
9
−
pF
f=1MH
Z
, VR=5V
Diodes
Others
!!!!
Item
Device configuration
Judgment contents
Electrical characteristic curves
!!!!
10m
Charge/discharge capacitance : 200pF±10%
Discharge resistance : 400Ω ±10% Discharge resistance : 330Ω
5 repetitions
No spark or smoke emitted : ±25kV
No element destruction : ±20kV
No malfunction : ± 8kV
−25°C25°C 75°C 125°C
Standard1
(Ta=25°C)
IEC1000-4-2
Charge/discharge capacitance : 150pF
10 repetitions
No malfunction
Contact : ± 8kV
Suspended : ±15kV
300
UMZ6.8N
1m
100µ
10µ
ZENER CURRENT : Iz (A)
1µ
100n
5 678
ZENER VOLTAGE : Vz (V)
Fig.1 Zener voltage characteristic
100
10
DYNAMIC IMPEADANCE : Zz (Ω)
1
0.01 0.1 1 10
ZENER CURRENT : Iz (mA)
Fig.2 Operating resistance
Zener current characteristic
200
100
POWER DISSIPATION : Pd (mW)
0
25 50 100 150
0
AMBIENT TEMPERATURE : Ta (˚C)
Fig.3 Derating curve