EMZ2 / UMZ2N / IMZ2A
Transistors
Power management (dual transistors)
EMZ2 / UMZ2N / IMZ2A
zFeature
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
zEquivalent circuit s
EMZ2 / UMZ2N
(3) (2) (1)
Tr
2
Tr
IMZ2A
(4) (5) (6)
Tr
1
2
Tr
1
zExternal dimensions (Unit : mm)
EMZ2
(3)
(4)
0.5
(2)(5)
0.22
0.13
ROHM : EMT6
0.5
(1)
(6)
1.2
1.6
Each lead has same dimensions
1.0
1.6
0.5
(4) (5) (6)
(3) (2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
EMZ2, UMZ2N
IMZ2A
V
V
V
Tstg
CBO
CEO
EBO
I
C
P
C
Tj
Limits
1Tr2
Tr
−60 60
−50 50 V
−67
−150 150
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
Unit
mW
V
V
mA
°C
°C
zPackage, marking, and packaging specifications
Part No. UMZ2N
Package
Marking
Code
Basic ordering unit (pieces)
EMZ2
EMT6
Z2
T2R
8000
UMT6
Z2
TR
3000
IMZ2A
SMT6
Z2
T108
3000
UMZ2N
0.2
0.15
0.1Min.
ROHM : UMT6
1
∗
2
∗
EIAJ : SC-88
IMZ2A
0.3
0.15
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
)
)
3
4
(
(
)
5
(
)
6
(
)
6
(
)
5
(
)
4
(
0.65
)
2
(
)
1
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
)
1
(
0.95
)
1.9
2
(
0.95
)
3
(
1.6
2.8
0.8
0to0.1
Each lead has same dimensions
1.3
2.0
2.9
1.1
Rev.A 1/4
EMZ2 / UMZ2N / IMZ2A
Transistors
zElectrical characteristics (Ta=25°C)
Tr1 (PNP)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Transition frequency of the device.
∗
2
Tr
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
∗
zElectrical characteristics curves
PNP Tr
mA)
COLLECTOR CURRENT : Ic (
Fig.1 Grounded emitter propagation
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
(NPN)
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Transition frequency of the device.
−50
Ta=100˚C
25˚C
−20
−40˚C
−10
−5
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
T
f
Cob
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
T
f
Cob
VCE= −6V
−60 −− VIC = −50µA
−
−50
−
−6
−
−
−
−
−
−
−
120
−−1404−5MHzpFV
60 −−VIC = 50µA
−
50
−
7
−
−
−
−
−
−
−
120
−−1802−
−10
Ta=25˚C
−8
mA)
(
C
V
−
V
−
µA
−0.1
µA
−0.1
V
−0.5
−
560
V
−
V
−
µA
0.1
µA
0.1
V
0.4
−
560
MHzpFVCE = 12V , IE = −2mA , f = 100MHz
3.5
−6
−2
−1
−0.5
−0.2
−0.1
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
V)
−4
−2
COLLECTOR CURRENT : I
−0.8 −1.6 −2.0
−0.4
COLLECTOR TO MITTER VOLTAGE : VCE (
Fig.2 Grounded emitter output
characteristics
characteristics (I)
I
C
= −1mA
E
= −50µA
I
V
CB
= −60V
V
EB
= −6V
I
C/IB
= −50mA/−5mA
V
CE
= −6V , IC = −1mA
CE
= −12V , IE = 2mA , f = 100MHz
CB
= −12V , IE = 0A , f = 1MHz
V
I
C
= 1mA
E
= 50µA
I
V
CB
= 60V
V
EB
= 7V
I
C/IB
= 50mA/5mA
V
CE
= 6V , IC = 1mA
CB
= 12V , IE = 0A , f = 1MHz
V
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
I
B
−1.20
=0
V)
∗
∗
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.3 Grounded emitter output
characteristics (II)
−250
−200
−150
−100
−50µA
IB=0
−5−3 −4−2−1
V)
Rev.A 2/4
EMZ2 / UMZ2N / IMZ2A
Transistors
500
Ta=25˚C
200
100
DC CURRENT GAIN : hFE
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (
VCE= −5V
−3V
−1V
mA)
Fig.4 DC current gain vs.
collector current (I)
−1
V)
(
CE(sat)
−0.5
−0.2
Ta=100˚C
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
25˚C
−40˚C
COLLECTOR CURRENT : IC (
lC/lB=10
mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
NPN Tr
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
C
C
°
C
25
55°
100°
−
=
Ta
Fig.10 Grounded emitter propagation
characteristics
V
CE
=6V
BE
(V)
500
FE
200
100
50
DC CURRENT GAIN : h
−0.2 −0.5 −1 −2 −5 −10 −20 −50−100
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (
Fig.5 DC current gain vs.
collector current (II)
1000
500
MHz)
(
T
200
100
50
TRANSITION FREQUENCY : f
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
100
Ta=25°C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
Fig.11 Grounded emitter output
characteristics ( Ι )
VCE= −6V
mA)
Ta=25˚C
V
CE
E
(
mA)
= −
12V
50 1000.5 20
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
(V)
−1
V)
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
IC/IB=
50
20
10
COLLECTOR CURRENT : IC (
Ta=25˚C
mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
20
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : V
Cib
Cob
−1 −2 −5 −10
−0.5 −20
Ta=25˚C
f=1MHz
I
I
EB
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : V
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
Fig.12 Grounded emitter output
characteristics ( ΙΙ )
E
=0A
C
=0A
(V)
20
CE
(V)
Rev.A 3/4
EMZ2 / UMZ2N / IMZ2A
Transistors
500
Ta=25°C
FE
200
100
50
VCE=5V
3V
1V
500
FE
200
100
50
Ta=100°C
−55°C
25°C
VCE=
5V
(V)
CE(sat)
0.05
0.5
0.2
IC/IB=50
0.1
20
10
Ta=25°C
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.13 DC current gain vs.
collector current ( Ι )
0.5
(V)
CE(sat)
0.2
Ta=100°C
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
25°C
−55°C
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
IC/IB=10
Fig.16 Collector-emitter saturation
voltage vs. collector current ( Ι )
pF)
pF)
20
10
5
Cib
Ta=25°C
f=1MHz
I
I
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.14 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.15 Collector-emitter saturation
voltage vs. collector current
0.5
(V)
CE(sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−55°C
0.5 1 2 5 10 20 50 100
0.2
COLLECTOR CURRENT : I
Fig.17 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
C
(mA)
IC/IB=50
Ta=25°C
V
CE
E
=6V
(mA)
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
Fig.18 Gain bandwidth product vs.
emitter current
(ps)
bb'
E
=0A
C
=0A
200
100
50
Ta=25°C
f=32MH
VCB=6V
Z
2
EMITTER INPUT CAPACITANCE : Cib (
1
COLLECTOR OUTPUT CAPACITANCE : Cob (
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Cob
CB
(V)
EB
(V)
Fig.19 Collector output capacitance vs.
collector-base voltage
20
10
−0.2 −0.5 −1 −2 −5 −10
BASE COLLECTOR TIME CONSTANT : Cc·r
EMITTER CURRENT : I
E
(mA)
Fig.20 Base-collector time constant
vs. emitter current
Emitter input capacitance vs.
emitter-base voltage
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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