ROHM EMZ1, UMZ1N, IMZ1A Technical data
EMZ1 / UMZ1N / IMZ1A
Transistors
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
zFeatures
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
NPN / PNP epitaxial planar silicon transistor
zEquivalent circuit
EMZ1 / UMZ1N IMZ1A
(3) (2) (1)
Tr
2
Tr
1
(4) (6)(5)
(4) (6)(5)
Tr
2
(3) (2) (1)
Tr
1
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO 60 V
V
VEBO
Collector current
Power
dissipation
EMZ1, UMZ1N
IMZ1A
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Tstg −55 to +150 ˚C
CEO
C mA150
I
C
P
Tj 150 ˚C
Limits
1
Tr
Tr
−60
−50
50
−6
7
−150
150 (TOTAL)
300 (TOTAL)
Unit
2
mW
V
V
1
∗
2
∗
zExternal dimensions (Unit : mm)
EMZ1
(4)
0.22
(6)
0.13
ROHM : EMT6
UMZ1N
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z1
)
4
(
)
5
(
0.2
0.15
0.1Min.
Abbreviated symbol : Z1
IMZ1A
)
6
ROHM : SMT6
EIAJ : SC-74
(
0.3
)
5
(
)
4
(
0.15
0.3to0.6
Abbreviated symbol : Z1
(3)
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
)
3
(
0.65
)
2
(
1.3
)
6
(
1.25
2.1
0to0.1
Each lead has same dimensions
)
1
(
)
2
(
)
3
(
1.6
2.8
0to0.1
Each lead has same dimensions
2.0
)
1
(
0.65
0.9
0.7
0.95
2.9
1.9
0.95
1.1
0.8
Rev.A 1/4
EMZ1 / UMZ1N / IMZ1A
Transistors
zElectrical characteristics (Ta = 25°C)
1 (NPN)
Tr
50µA
1mA
50µA
=
60V
=7
V
=
50mA/5mA
=
6V, I
C
=
1mA
=
12V, I
E
=−
=
12V, I
E
=
−50µA
−1mA
−50µA
=
−60V
=−6
V
=
−50mA/−5mA
=
−6V, I
C
=
=
−12V, I
=
−12V, I
Conditions
2mA, f=100MHz
0A, f=1MHz
Conditions
−1mA
E
=
2mA, f=100MHz
E
=
0A, f=1MHz
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
(V)
10
Ta=25˚C
8
(mA)
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : VCE
Fig.3 Grounded emitter output
characteristics ( II )
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
20
(V)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Symbol
BV
BV
BV
I
CBO
I
EBO
V
CE (sat)
h
Transition frequency
Output capacitance
Cob
Tr
2 (PNP)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
BV
BV
BV
V
I
CBO
I
EBO
CE (sat)
h
Transition frequency
Output capacitance
Cob
zPackaging specifications
Package
Code TR T108
Basic ordering
Type
unit (pieces)
EMZ1
UMZ1N
IMZ1A
zElectrical characteristic curves
1 (NPN)
Tr
50
20
(mA)
C
10
5
25˚C
Ta=100˚C
55˚C
−
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
VCE=
6V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
Min.
60
CBO
CEO
50
EBO
7
−
−
−
FE
120
− 180 −
f
T
−
Min.
CBO
−60
CEO
−50
EBO
−6
−
−
−
FE
120
f
T
−
−
Taping
T2R
8000
100
(mA)
C
COLLECTOR CURRENT : I
COLLECTOR TO EMITTER VOLTAGE : V
Typ. Max. Unit
I
C
−
−
−
−
−
−
−
0.1
0.1
−
0.4
−
560
−
3.5
2
V
V
V
µA
µA
V
−
MHz
PF
=
C
=
I
E
=
I
CB
V
EB
V
I
C/IB
CE
V
CE
V
CB
V
Typ. Max. Unit
V
C
=
V
V
µA
µA
V
−
MHz
PF
I
I
C
=
I
E
=
V
CB
V
EB
C/IB
I
CE
V
CE
V
CB
−
−
−
−
−
−
−
140
4
−
−
−
−0.1
−0.1
−0.5
560
− V
5
3000 3000
Ta=25˚C
80
60
40
20
0
0.4 0.8 1.2 1.6 2.00
Fig.2 Grounded emitter output
characteristics ( I )
Rev.A 2/4
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