ROHM EMX3, UMX3N, IMX3 Technical data
General purpose (dual transistors)
EMX3 / UMX3N / IMX3
Features Dimensions (Unit : mm)
Two 2SC2412AK chips in a EMT or UMT or SMT package.
Inner circuits
EMX3 / UMX3N IMX3
(1)(2)(3)
(6)(5)(4)
EMX3
0.22
0.13
(4)
(6)
1.2
1.6
(3)
0.5
1.0
0.5
1.6
0.5
(2)(5)
(1)
2
Tr
(5) (6)
(4)
Tr
2
Tr
1
(3)
(2) (1)
Tr
1
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX3
EMT6
X3
T2R
8000
UMX3N
UMT6
X3
TR
3000
IMX3
SMT6
X3
T108
3000
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EEMX3 / UMX3N
IMX3
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
60
50
7
150
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
60
50
7
−
−
−
120
−
−
∗1
∗2
−
−
−
−
−
−
−
180
2 3.5 pF
0.1
0.1
0.4
560
Each lead has same dimensionsROHM : EMT6
UMX3N
0.2
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMX3
0.3
0.15
0.3Min.
EIAJ : SC-74
Unit
V
C
=50μA
V
V
μA
μA
V
−
MHz
I
C
=1mA
I
E
=50μA
I
V
CB
EB
V
C/IB
I
CE
V
V
CE
CB
V
−
−
−
−
Conditions
=60V
=7V
=50mA/5mA
=6V, IC=1mA
=12V, IE=−2mA, f=100MHz
=12V, IE=0mA, f=1MHz
)
)
3
4
(
(
)
5
(
)(
6
(
)(
5
)
4
)
2
(
)
6
(
1.25
2.1
0~0.1
Each lead has same dimensions
1.6
2.8
0~0.1
Each lead has same dimensionsROHM : SMT6
1.3
)
1
(
0.65 0.65
0.9
0.7
)
1
(
0.95
2.9
)
1.9
2
(
0.95
)
3
(
1.1
0.8
∗
2.0
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.B
EMX3 / UMX3N / IMX3
Data Sheet
Electrical characteristics curves
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
25°C
100°C
−55°C
=
Ta
Fig.1 Grounded emitter propagation
characteristics
500
Ta=25°C
FE
200
100
50
VCE=5V
V
CE
=6V
BE
(V)
3V
1V
100
Ta=25°C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
characteristics ( Ι )
500
FE
200
100
50
Ta=100°C
25°C
−55°C
VCE=
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
5V
(V)
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : V
30μA
27μA
24μA
21μA
18μA
15μA
12μA
9μA
6μA
3μA
IB=0A
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
0.5
(V)
CE(sat)
0.2
IC/IB=50
0.1
0.05
20
10
CE
Ta=25°C
20
(V)
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current ( Ι )
0.5
(V)
CE(sat)
0.2
Ta=100°C
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
Fig.7 Collector-emitter saturation
25°C
−55°C
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
voltage vs. collector current ( Ι )
IC/IB=10
(mA)
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.5
(V)
CE(sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Fig.8 Collector-emitter saturation
Ta=100°C
25°C
−55°C
0.5 1 2 5 10 20 50 100
0.2
COLLECTOR CURRENT : I
C
voltage vs. collector current (ΙΙ)
IC/IB=50
(mA)
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
E
V
(mA)
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
Fig.9 Gain bandwidth product vs.
emitter current
CE
=6V
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.B
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